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MURS320

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size419KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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MURS320 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

MURS320 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codecompliant
Other featuresLOW LEAKAGE CURRENT
applicationULTRA FAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MURS320
Technical Data
Data Sheet N0162 Rev. B
MURS320 ULTRAFAST RECTIFIERS
Features
Ultra-Fast Switching
High Current Capability
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
SMC
Additional testing can be offered upon request
Circuit Diagram
Mechanical Data
Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable per MIL-STD-750,
Method 2026
Polarity: Cathode Band or Cathode Notch
Weight: 0.23grams(approx)
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
@T
L
= 145°C
Symbol
V
RRM
V
RWM
V
R
Io
I
FSM
V
FM1
I
R
R
θJA
Trr
T
J
, T
STG
MURS320
200
3.0
75
0.9
5.0
30
80
35
-65 to +175
Unit
V
A
A
V
µA
K/W
ns
°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 3.0A, T
J
=25°C
@T
A
= 25°C
@T
A
= 100°C
Typical Thermal Resistance Junction to Ambient (Note 1)
Maximum Reverse Recovery Time (Note 2)
Operating and Storage Temperature Range
Note: 1. Mounted on P.C. Board with 14mm
2
(0.13mm thick) copper pad.
2. Measured with I
F
=0.5A; I
R
=1.0A; I
RR
=0.25A.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

MURS320 Related Products

MURS320
Description Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
Is it Rohs certified? conform to
Maker Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction R-PDSO-C2
Reach Compliance Code compliant
Other features LOW LEAKAGE CURRENT
application ULTRA FAST RECOVERY
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V
JEDEC-95 code DO-214AB
JESD-30 code R-PDSO-C2
Maximum non-repetitive peak forward current 75 A
Number of components 1
Phase 1
Number of terminals 2
Maximum operating temperature 175 °C
Minimum operating temperature -65 °C
Maximum output current 3 A
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Maximum repetitive peak reverse voltage 200 V
Maximum reverse current 5 µA
Maximum reverse recovery time 0.035 µs
surface mount YES
Terminal form C BEND
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED

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