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PXT3906-TP-HF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size439KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

PXT3906-TP-HF Overview

Small Signal Bipolar Transistor,

PXT3906-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Maximum time at peak reflow temperature10
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
PXT3906
Features
available upon request by adding suffix "-HF"
Halogen
free
Maximum Ratings
Symbol
Rating
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 500mWatts of Power Dissipation
Marking:2A
Rating
Unit
PNP General
Purpose Amplifier
V
V
V
A
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
-40
-40
-6.0
-0.2
P
D
T
J
T
STG
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
c
BO
Power Dissipation
Operating Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=-1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-10µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-10µAdc, I
C
=0)
Collector cut-off Current
(V
CB
=-30Vdc,
I
E
=0
Emitter cut-off Current
(V
EB
=-6Vdc,
I
C
=0
DC Current Gain*
(I
C
=-10mAdc, V
CE
=-1.0Vdc)
(I
C
=-50mAdc, V
CE
=-1.0Vdc)
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
Outpuut Capacitance
(V
CB
=-5.0Vdc,
f=1.0MHz,I
E
=0)
Inpuut Capacitance
(V
EB
=-0.5Vdc,
f=1.0MHz,I
C
=0)
Current Gain-Bandwidth Product
(I
C
=-10mAdc, V
CE
=-20Vdc, f=100MHz)
Noise Figure
(V
CE
=-5.0V,
f=1.0kHz,I
C
=-100uA,Rs=1.0K)
Delay Time
(V
CC
=-3.0Vdc, V
BE
=-0.5Vdc
Rise Time
I
C
=-10mAdc, I
B1
=-1.0mAdc)
Storage Time
(V
CC
=-3.0Vdc, I
C
=-10mAdc
Fall Time
I
B1
=I
B2
=-1.0mAdc )
300µs, Duty Cycle
2.0%
100
60
30
0.5
-55 to +150
-55 to +150
Min
-40
-40
-6.0
-0.05
W
O
O
C
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Max
Units
Vdc
Vdc
Vdc
uAdc
I
EBO
h
FE
-0.05
uAdc










C










SOT-89
A
B
K
E
D
G
F
H
J
1
2
3
1:Base
2:Collector
3:Emitter
300
V
CE(sat)
-0.25
-0.4
-0.65
-0.85
-0.95
4.5
10
Vdc











DIMENSINS
 


 

 






















































V
BE(sat)
Vdc
pF
pF
Cobo
Cibo
f
T
NF
250
4.0
MHz
dB
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
*Pulse Width
35
35
225
75
ns
ns
ns
ns
www.mccsemi.com
Revision:
B
1
of
3
2013/01/01

PXT3906-TP-HF Related Products

PXT3906-TP-HF PXT3906-TP
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
Is it Rohs certified? conform to conform to
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Maximum time at peak reflow temperature 10 NOT SPECIFIED

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