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PDMB150BS12

Description
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
CategoryDiscrete semiconductor    The transistor   
File Size280KB,4 Pages
ManufacturerKyocera
Download Datasheet Parametric View All

PDMB150BS12 Overview

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

PDMB150BS12 Parametric

Parameter NameAttribute value
MakerKyocera
package instructionFLANGE MOUNT, R-XUFM-X5
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)800 ns
Nominal on time (ton)400 ns
QS043-402-20382(2/5)
IGBT
M½½½½½-D½½½
□ 回 路 図 :
CIRCUIT
150
A,
1200V
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
94.0
80
±0.25
PDMB150BS12
12.0 11.0 12.0 11.0 12.0
(C2E1)
1
(E2)
2
(C1)
3
7(G2)
6(E2)
1
48.0
16.0
14.0
2
3
2-Ø6.5
7
6
5(E1)
4(G1)
5
4
3-M5
23.0
23.0
17.0
14
9
14
9
14
4-fasten tab
#110 t=0.5
21.2 7.5
7
30
+1.0
- 0 .5
LABEL
4 18.0
4
Dimension:[mm½
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
DC
1½½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
½½½
R½½½½
V½½½½
U½½½
(RMS)
N・½
(kgf½cm)
I½½½
1,200
±20
150
300
765
-40½+150
-40½+125
2,500
3(30.6)
2(20.4)
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 1200V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 150A,V
GE
= 15V
CE
= 5V,I
= 150mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
= 600V
L
= 4.0Ω
G
= 10.0Ω
GE
= ±15V
M½½.
4.0
T½½.
2.3
8,300
0.25
0.40
0.25
0.80
M½½.
1.5
1.0
2.7
8.0
0.45
0.70
0.35
1.10
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
150
300
T½½½ C½½½½½½½½
= 150A,V
GE
= 0V
= 150A,V
GE
= -10V
½i/½t= 300A/μs
M½½.
T½½.
2.2
0.2
M½½.
2.6
0.3
U½½½
DC
1½½
U½½½
μ½
□ 熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
(Tc測定点チップ直下)
M½½.
T½½.
M½½. U½½½
0.163
℃/W
0.327
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