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DP5Z4MW16PA3-20B

Description
Flash, 4MX16, 200ns, DENSE SLCC, PGA-50
Categorystorage    storage   
File Size1007KB,21 Pages
ManufacturerB&B Electronics Manufacturing Company
Download Datasheet Parametric View All

DP5Z4MW16PA3-20B Overview

Flash, 4MX16, 200ns, DENSE SLCC, PGA-50

DP5Z4MW16PA3-20B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerB&B Electronics Manufacturing Company
Parts packaging codeQMA
package instructionPGA, PGA50,5X10
Contacts50
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time200 ns
Data pollingNO
JESD-30 codeR-XQMA-P50
JESD-609 codee0
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size64
Number of terminals50
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4MX16
Package body materialUNSPECIFIED
encapsulated codePGA
Encapsulate equivalent codePGA50,5X10
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
page size64 words
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Department size64K
Maximum standby current0.0008 A
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationQUAD
switch bitNO
typeNOR TYPE
4Mx16, 120 - 200ns, STACK/PGA
30A161-24
A
64 Megabit FLASH EEPROM
DP5Z4MW16Pn3
PRELIMINARY
DESCRIPTION:
The DP5Z4MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory
subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip
Carriers (SLCC). Available unleaded, straight leaded, ‘’J’’ leaded, gullwing
leaded packages, or mounted on a 50-pin PGA co-fired ceramic substrate.
The Device packs 64-Megabits of FLASH EEPROM in an area as small as 0.463
in
2
, while maintaining a total height as low as 0.349 inches.
The DP5Z4MW16Pn3 contains four individual 1 Meg x 16 FLASH EEPROM
memory devices. Each SLCC is hermetically sealed making the module
suitable for commercial, industrial and military applications.
By using SLCCs, the ‘’Stack’’ family of modules offer a higher board density
of memory than available with conventional through-hole, surface mount or
hybrid techniques.
DP5Z4MW16PY3
DP5Z4MW16PI3
FEATURES:
Organization: 4Meg x 16
Fast Access Times: 120, 150, 200ns (max.)
Single 5.0 Volt
High-Density Symmetrically Blocked Architecture
- Sixteen 64 K Word Blocks Per Device
Extended Cycling Capability
- 100K Write/Erase Cycles
Automated Erase and Program Cycles
- Command User Interface
- Status Register
SRAM-Compatible Write Interface
Hardware Data Protection Feature
- Erase / Write Lockout during Power Transitions
Packages Available:
DP5Z4MW16PY3 48 - Pin SLCC
DP5Z4MW16PI3
48 - Pin Straight Leaded SLCC
DP5Z4MW16PH3 48 - Pin Gullwing Leaded SLCC
DP5Z4MW16PJ3
48 - Pin ‘’J’’ Leaded SLCC
DP5Z4MW16PA3 50 - Pin PGA Dense-SLCC
DP5Z4MW16PJ3
DP5Z4MW16PA3
DP5Z4MW16PH3
30A161-24
REV. C
This document contains information on a product presently under
development at Dense-Pac Microsystems, Inc. Dense-Pac reserves the
right to change products or specifications herein without prior notice.
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