RS1JAF datasheet, PDF - EEWORLD Datasheet

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RS1JAF: DescriptionFast recovery diode, 1.0A, 600V, 30A, 1.3V, 1.0A, 5.0μA, 250nS; CategoryDiscrete semiconductor Fast recovery diode; File Size1MB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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RS1JAF Overview

Fast recovery diode, 1.0A, 600V, 30A, 1.3V, 1.0A, 5.0μA, 250nS

RS1JAF Parametric

Parameter Name	Attribute value
Case Style	SMAF
IVA(A)	1.0
VRRM (V)	600
IFSM (A)	30
VF (V)	1.3
@IVA(A)	1.0
Maximum reverse current	5.0
TRR(nS)	250
class	Diodes

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RS1AFA--RS1MFA

Surface Mount Rectifiers

FEATURES

For surface mounted applications

Built-in strain relief, ideal for automated placement

High temperature soldering: 260 C/10 seconds at terminals

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Plastic package has underwriters, laborator flammability classification 94V-0

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RS1A

RS1B

100

RS1D

200

140

200

RS1G

400

280

400

1.0

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UNITS

1000

700

1000

UNITS

℃/W

℃

UNITS

mail:lge@lgesemi.com

Low profile package

SMAF

MECHANICAL DATA

Case :JEDEC SMAFL, molded plastic over

,passivated

chip

Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Polarity: color band denotes cathode end

Marking Information

XXXX

LGE：Lu Guang Electronic XXXX：

marking code (RS1A-RS1M)

Maximum Ratings

(@TA = 25° unless otherwise specified)

RS1J

600

420

600

RS1K

800

560

800

RS1M

Characteristic

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current T

=90℃

Peak forward surge current

8.3ms single half-sine-wave

superimposed on rated load

FSM

Symbol

RRM

RMS

F(AV)

Thermal Characteristics

RS1A

Characteristic

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

Symbol

ΘJL

STG

- 55 ------ + 150

7.0

RS1B

RS1D

RS1G

RS1J

RS1K

RS1M

Operating junction and storage temperature range

Electrical Characteristics

(@TA = 25° unless otherwise specified)

RS1A

Characteristic

Maximum instantaneous forward voltage at1.0 A

Maximum reverse current

at rated DC blocking voltage

Typical reverse recovery time (Note1)

=25

℃

=125℃

150

Symbol

50.0

250

500

1.30

5.0

RS1B

RS1D

RS1G

RS1J

RS1K

RS1M

NOTE:

1.Reverse recovery time test conditions: I

=0.5A, I

=1.0A, I

=0.25A

2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts

3. Thermal resistance from junction to lea

Revision:20170701-P1

www.lgesemi

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RS1JAF Related Products

	RS1JAF	RS1BAF	RS1GAF	RS1KAF	RS1AAF	RS1MAF	RS1DAF
Description	Fast recovery diode, 1.0A, 600V, 30A, 1.3V, 1.0A, 5.0μA, 250nS	Fast recovery diode, 1.0A, 100V, 30A, 1.3V, 1.0A, 5.0μA, 150nS	Fast recovery diode, 1.0A, 400V, 30A, 1.3V, 1.0A, 5.0μA, 150nS	Fast recovery diode, 1.0A, 800V, 30A, 1.3V, 1.0A, 5.0μA, 500nS	Fast recovery diode, 1.0A, 50V, 30A, 1.3V, 1.0A, 5.0μA, 150nS	Fast recovery diode, 1.0A, 1000V, 30A, 1.3V, 1.0A, 5.0μA, 500nS	Fast recovery diode, 1.0A, 200V, 30A, 1.3V, 1.0A, 5.0μA, 150nS
Case Style	SMAF	SMAF	SMAF	SMAF	SMAF	SMAF	SMAF
IVA(A)	1.0	1.0	1.0	1.0	1.0	1.0	1.0
VRRM (V)	600	100	400	800	50	1000	200
IFSM (A)	30	30	30	30	30	30	30
VF (V)	1.3	1.3	1.3	1.3	1.3	1.3	1.3
@IVA(A)	1.0	1.0	1.0	1.0	1.0	1.0	1.0
TRR(nS)	250	150	150	500	150	500	150
class	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes
Maximum reverse current	5.0	5.0	5.0	5.0	5.0	-	5.0

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