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IRLR3303TRLPBF

Description
Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size145KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRLR3303TRLPBF Overview

Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

IRLR3303TRLPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionLEAD FREE, DPAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)130 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)35 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.031 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)68 W
Maximum pulsed drain current (IDM)140 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD- 91316F
IRLR/U3303
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3303)
Straight Lead (IRLU3303)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 30V
G
S
R
DS(on)
= 0.031Ω
I
D
= 35A…
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D -P ak
T O -252 A A
I-P ak
T O -25 1A A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
35
…
25
140
68
0.45
± 16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
9/28/98

IRLR3303TRLPBF Related Products

IRLR3303TRLPBF IRLR3303TRPBF IRLR3303TRRPBF
Description Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Is it Rohs certified? conform to conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-252AA TO-252AA TO-252AA
package instruction LEAD FREE, DPAK-3 LEAD FREE, DPAK-3 LEAD FREE, DPAK-3
Contacts 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE, AVALANCHE RATED LOGIC LEVEL COMPATIBLE, AVALANCHE RATED LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 130 mJ 130 mJ 130 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
Maximum drain current (Abs) (ID) 35 A 35 A 35 A
Maximum drain current (ID) 20 A 20 A 20 A
Maximum drain-source on-resistance 0.031 Ω 0.031 Ω 0.031 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 68 W 68 W 68 W
Maximum pulsed drain current (IDM) 140 A 140 A 140 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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