IRFF121 datasheet, PDF - EEWORLD Datasheet

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IRFF121: Description6A, 80V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size148KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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IRFF121 Overview

6A, 80V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

IRFF121 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	36 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	20 W
Maximum pulsed drain current (IDM)	24 A
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFF121 Related Products

	IRFF121	IRFF122	IRFF123
Description	6A, 80V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	5A, 80V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	36 mJ	36 mJ	36 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	100 V	80 V
Maximum drain current (Abs) (ID)	6 A	5 A	5 A
Maximum drain current (ID)	6 A	5 A	5 A
Maximum drain-source on-resistance	0.3 Ω	0.4 Ω	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	20 W	20 W	20 W
Maximum pulsed drain current (IDM)	24 A	20 A	20 A
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is Samacsys	-	N	N
Base Number Matches	-	1	1

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