IXGD50N60B-7Y datasheet, PDF - EEWORLD Datasheet

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IXGD50N60B-7Y: DescriptionInsulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-6; CategoryDiscrete semiconductor The transistor; File Size51KB，1 Pages; ManufacturerIXYS; Environmental Compliance

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IXGD50N60B-7Y Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-6

IXGD50N60B-7Y Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	DIE
package instruction	DIE-6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JESD-30 code	R-XUUC-N6
Number of components	1
Number of terminals	6
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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Insulated Gate Bipolar Transistors

IGBT-Chips

Type

T

JM

= 150°C

V

IXGD28N30-43

IXGD40N30-5X

IXGD12N60B-3X

IXGD31N60-4X

IXGD41N60-5X

IXGD60N60-7Y

IXGD200N60B-9X

IXGD2N100-1M

IXGD4N100-1T

IXGD8N100-2L

IXGD12N100-33

IXGD20N100-4U

IXGD25N100-5T

IXGD25N120-5T

IXGD45N120-7U

IXGD28N30A-43

IXGD20N60B-4X

IXGD24N60B-4X

IXGD28N60B-4X

IXGD30N60B-5X

IXGD32N60B-5X

IXGD40N30A-5X

IXGD50N60B-7Y

IXGD28N90B-5X

IXGD12N100A-33

IXGD15N100C-4U

IXGD25N100A-5T

IXGD15N120B-4U

IXGD25N120A-5T

IXGD35N120B-7U

300

V

2.1

1.5

2.1

1.8

1.4

1.7

1.6

2.5

2.7

3.5

2.7

3.4

2.9

2.2

2.1

2.0

2.5

1.8

1.6

2.3

1.8

2.2

1.8

4.0

3.5

3.9

3.2

3.9

3.2

A

20

12

20

2

4

8

12

20

12

15

20

15

20

pF

1500

2500

750

1500

2500

3700

9000

80

350

600

750

1750

2750

4700

1500

2500

4000

2500

750

1720

2750

1720

2750

4200

ns

120

220

120

400

450

360

160

390

800

280

800

390

120

150

120

200

190

120

150

130

500

100

500

160

600

160

IX43

IX5X

IX3X

IX4X

IX5X

IX7Y

IX9X

IX1M

IX1T

IX2L

IX33

IX4U

IX5T

IX7U

IX43

IX4X

IX5X

IX7Y

IX5X

IX33

IX4U

IX5T

IX4U

IX5T

IX7U

mm

5.64 x 4.67

6.58 x 6.58

4.39 x 3.60

5.65 x 4.70

6.59 x 6.59

8.89 x 7.16

14.20 x 10.60

1.96 x 1.68

2.54 x 2.54

3.17 x 3.17

4.39 x 3.60

5.77 x 4.96

6.73 x 6.61

9.51 x 7.21

5.64 x 4.67

5.65 x 4.70

6.58 x 6.58

6.59 x 6.59

6.58 x 6.58

8.89 x 7.16

6.59 x 6.59

4.39 x 3.60

5.77 x 4.96

6.73 x 6.61

5.77 x 4.96

6.73 x 6.61

9.51 x 7.21

mils

222 x 184

259 x 259

173 x 142

222 x 185

259 x 259

350 x 282

559 x 417

77 x 66

100 x 100

125 x 125

173 x 142

227 x 195

265 x 260

375 x 284

222 x 184

222 x 185

259 x 259

350 x 282

259 x 259

173 x 142

227 x 195

265 x 260

227 x 195

265 x 260

375 x 284

15 mil x 1

15 mil x 2

12 mil x 1

15 mil x 1

15 mil x 2

15 mil x 3

15 mil x 6

5 mil x 1

12 mil x 1

15 mil x 1

10 mil x 4

15 mil x 3

15 mil x 1

15mil x 1

15 mil x 2

20 mil x 1

15 mil x 3

15 mil x 2

12 mil x 1

15 mil x 1

10 mil x 4

15 mil x 1

10 mil x 4

15 mil x 3

IXGH28N30A

IXGH40N30

IXGP12N60B

IXGH31N60

IXGH41N60

IXGH60N60B

IXGN200N60B

V

CES

V

CE(sat)

@ I

C

ies

typ.

t

fi

typ.

Chip

type

Chip size

dimensions

Source

bond wire

recommend

Equivalent

device

data sheet

Dim.

out-

line

No.

1

26

3

11

26

27

23

30

2

31

3

12

9

32

1

11

26

27

26

3

12

9

12

9

32

600

Low V

CE(sat)

1000

IXGP8N100

IXGH12N100

IXGH20N100

IXGH25N100

IXGH25N120

IXGH45N120

IXGH28N30A

IXGH20N60B

IXGH24N60B

IXGH28N60B

IXGH30N60B

IXGH32N60B

IXGH40N30A

IXGH50N60B

IXGH28N90B

IXGH12N100A

IXGH15N100C

IXGH25N100A

IXGP15N120B

IXGH25N120A

IXGH35N120B

1200

300

600

High Speed

900

1000

1200

Notes:

1 Recommended Gate bond wire is 8 mil except 6 mil wire must be used for starred (*) types.

2 Maximum switching limits from packaged device data sheet are given in the respective discrete data sheet.

3 Dice are tested to Vsat limits as indicated up to a maximum of 20A.

4 Recommended die processing thermal budget is not to exceed 365 degrees C for 5 minutes.

IXYS reserves the right to change limits, test conditions and dimensions.

J-3

IXGD50N60B-7Y Related Products

	IXGD50N60B-7Y	IXGD12N60B-3X	IXGD28N90B-5X	IXGD200N60B-9X	IXGD35N120B-7U	IXGD2N100-1M
Description	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-6	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2	Insulated Gate Bipolar Transistor, 900V V(BR)CES, N-Channel, DIE-2	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-9	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-7	Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-2
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Parts packaging code	DIE	DIE	DIE	DIE	DIE	DIE
package instruction	DIE-6	DIE-2	UNCASED CHIP, S-XUUC-N2	DIE-9	DIE-7	DIE-2
Contacts	6	2	2	9	7	2
Reach Compliance Code	compliant	compliant	unknown	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Collector-emitter maximum voltage	600 V	600 V	900 V	600 V	1200 V	1000 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
JESD-30 code	R-XUUC-N6	R-XUUC-N2	S-XUUC-N2	R-XUUC-N9	R-XUUC-N7	R-XUUC-N2
Number of components	1	1	1	1	1	1
Number of terminals	6	2	2	9	7	2
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	conform to	-	conform to	conform to	conform to
Maker	IXYS	IXYS	-	IXYS	IXYS	IXYS

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