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JAN2N335

Description
Small Signal Bipolar Transistor, 0.025A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size118KB,12 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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Small Signal Bipolar Transistor, 0.025A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

JAN2N335 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2124501572
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)0.025 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusQualified
GuidelineMIL-19500/37E
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)6 MHz
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 16 January 2012.
INCH-POUND
MIL-PRF-19500/37E
w/AMENDMENT 1
16 December 2011
SUPERSEDING
MIL-S-19500/37E
16 September 2001
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,
2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2
2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2, JAN
Inactive for new design after 7 June 1999
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
1.2 Physical dimensions. See figure 1 (TO-5 for isolated leads only) and figure 2 (TO-205AA).
1.3 Maximum ratings.
P
T
T
A
= 25°C
2N333, T2, LT2
2N335, T2, LT2
2N336, T2, LT2
mW
(1) 150
2N333A, T2, LT2
2N335A, T2, LT2
2N336A, T2, LT2
mW
(2) 500
V
EBO
V
CEO
V
CBO
2N333, T2, LT2
2N335, T2, LT2
2N336, T2, LT2
V dc
1
2N333A, T2, LT2
2N335A, T2, LT2
2N336A, T2, LT2
V dc
4
2N333, T2, LT2
2N335, T2, LT2
2N336, T2, LT2
°C
-65 to +175
2N333A, T2, LT2
2N335A, T2, LT2
2N336A, T2, LT2
°C
-65 to +175
T
stg
V dc
45
V dc
45
A
(1) Derate approximately 1 mW/°C for T between +25°C and +175°C.
(2) Derate approximately 3.33 mW/°C for T between +25°C and +175°C.
A
1.4 Primary electrical characteristics.
h
fe
V
CB
= 5 V dc, I
E
= -1 mA
Limits
2N333, T2, LT2
2N333A, T2, LT2
2N335, T2, LT2
2N335A, T2, LT2
2N336, T2, LT2
2N336A, T2, LT2
MHz
Min
Max
18
44
37
90
76
270
2.5
15
f
hfb
V
CB
= 5 V dc
I
E
= -1 mA dc
C
obo
V
CB
= 5 V dc
I
E
= 0 mA dc
100kHz
f
1 MHz
pF
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at
https://assist.daps.dla.mil.
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