PD - 94360
IRFP32N50KS
SMPS MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency
Circuits
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Low R
DS(on)
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torque, 6-32 or M3 screw
HEXFET
®
Power MOSFET
V
DSS
500V
R
DS(on)
typ.
0.135Ω
I
D
32A
SMD-247
Max.
32
20
130
460
3.7
± 30
13
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
10lb*in (1.1N*m)
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
450
32
46
Units
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
°C/W
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1
12/18/01
IRFP32N50KS
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.54 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.135 0.16
Ω
V
GS
= 10V, I
D
= 32A
3.0
––– 5.0
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 50
µA V
DS
= 500V, V
GS
= 0V
––– ––– 250
µA V
DS
= 400V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 30V
nA
––– ––– -100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
28
120
48
54
5280
550
45
5630
155
265
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 32A
190
I
D
= 32A
59
nC V
DS
= 400V
84
V
GS
= 10V
–––
V
DD
= 250V
–––
I
D
= 32A
ns
–––
R
G
= 4.3Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 400V
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
32
A
130
––– ––– 1.5
V
––– 530 800
ns
––– 9.0 13.5
µC
––– 30 –––
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
T
J
= 25°C, I
F
= 32A
di/dt = 100A/µs
D
S
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Starting T
J
= 25°C, L = 0.87mH, R
G
= 25Ω,
I
AS
= 32A,
I
SD
≤
32A, di/dt
≤
197A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
2
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IRFP32N50KS
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
I D, Drain-to-Source Current (A)
100
I D, Drain-to-Source Current (A)
10
10
5.0V
1
1
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
100
0.1
1
10
100
0.01
0.1
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
3.0
I
D
= 32A
I
D
, Drain-to-Source Current (A)
2.5
100
T
J
= 150
°
C
2.0
10
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
4
5
7
8
V DS = 50V
20µs PULSE WIDTH
9
11
12
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFP32N50KS
100000
V GS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
20
V
GS
, Gate-to-Source Voltage (V)
SHORTED
I
D
=
32A
16
10000
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
C, Capacitance(pF)
Ciss
12
1000
Coss
100
8
4
Crss
10
1
10
100
1000
0
0
40
80
120
160
200
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
I
D
, Drain Current (A)
100
100
10us
10
T
J
= 25
°
C
1
100us
10
0.1
0.2
V
GS
= 0 V
0.6
0.9
1.3
1.6
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10ms
10
100
1000
10000
1ms
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFP32N50KS
35
30
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
25
20
15
10
5
0
25
50
75
100
125
150
-
V
DD
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
T
C
, Case Temperature ( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
1
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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