Cache SRAM Module, 128KX32, 13.5ns, CMOS
| Parameter Name | Attribute value |
| Maker | Cypress Semiconductor |
| package instruction | DIMM, DIMM160 |
| Reach Compliance Code | compliant |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 13.5 ns |
| I/O type | COMMON |
| JESD-30 code | R-XSMA-N160 |
| memory density | 4194304 bit |
| Memory IC Type | CACHE SRAM MODULE |
| memory width | 32 |
| Number of functions | 1 |
| Number of terminals | 160 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 128KX32 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| encapsulated code | DIMM |
| Encapsulate equivalent code | DIMM160 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL |
| power supply | 3.3,5 V |
| Certification status | Not Qualified |
| Minimum standby current | 4.75 V |
| Maximum slew rate | 1.4 mA |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | SINGLE |

| CYM74P431BPM-50C | CYM74P430BPM-60C | CYM74P430BPM-50C | CYM74P435BPM-66C | CYM74P434BPM-66C | CYM74P435BPM-60C | CYM74P434BPM-50C | CYM74P434BPM-60C | |
|---|---|---|---|---|---|---|---|---|
| Description | Cache SRAM Module, 128KX32, 13.5ns, CMOS | Cache SRAM Module, 64KX32, 10ns, CMOS | Cache SRAM Module, 64KX32, 13.5ns, CMOS | Cache SRAM Module, 128KX32, 8.5ns, CMOS | Cache SRAM Module, 64KX32, 8.5ns, CMOS | Cache SRAM Module, 128KX32, 10ns, CMOS | Cache SRAM Module, 64KX32, 13.5ns, CMOS | Cache SRAM Module, 64KX32, 10ns, CMOS |
| package instruction | DIMM, DIMM160 | DIMM, DIMM160 | DIMM, DIMM160 | DIMM, DIMM160 | DIMM, DIMM160 | DIMM, DIMM160 | DIMM, DIMM160 | DIMM, DIMM160 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | unknown | compliant | compliant | compliant |
| ECCN code | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| Maximum access time | 13.5 ns | 10 ns | 13.5 ns | 8.5 ns | 8.5 ns | 10 ns | 13.5 ns | 10 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-XSMA-N160 | R-XSMA-N160 | R-XSMA-N160 | R-XSMA-N160 | R-XSMA-N160 | R-XSMA-N160 | R-XSMA-N160 | R-XSMA-N160 |
| memory density | 4194304 bit | 2097152 bit | 2097152 bit | 4194304 bit | 2097152 bit | 4194304 bit | 2097152 bit | 2097152 bit |
| Memory IC Type | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE |
| memory width | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 160 | 160 | 160 | 160 | 160 | 160 | 160 | 160 |
| word count | 131072 words | 65536 words | 65536 words | 131072 words | 65536 words | 131072 words | 65536 words | 65536 words |
| character code | 128000 | 64000 | 64000 | 128000 | 64000 | 128000 | 64000 | 64000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 128KX32 | 64KX32 | 64KX32 | 128KX32 | 64KX32 | 128KX32 | 64KX32 | 64KX32 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
| Encapsulate equivalent code | DIMM160 | DIMM160 | DIMM160 | DIMM160 | DIMM160 | DIMM160 | DIMM160 | DIMM160 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 3.3,5 V | 3.3,5 V | 3.3,5 V | 3.3,5 V | 3.3,5 V | 3.3,5 V | 3.3,5 V | 3.3,5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Minimum standby current | 4.75 V | 3.14 V | 3.14 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| Maximum slew rate | 1.4 mA | 0.75 mA | 0.75 mA | 1.55 mA | 0.9 mA | 1.55 mA | 0.9 mA | 0.9 mA |
| Maximum supply voltage (Vsup) | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maker | Cypress Semiconductor | Cypress Semiconductor | - | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |