IR150DG06HCBPBF datasheet, PDF

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IR150DG06HCBPBF: DescriptionRectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1; CategoryDiscrete semiconductor diode; File Size54KB，2 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IR150DG06HCBPBF Overview

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1

IR150DG06HCBPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIE
package instruction	S-XUUC-N1
Contacts	1
Reach Compliance Code	compliant
ECCN code	EAR99
application	HIGH POWER
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	S-XUUC-N1
Number of components	1
Phase	1
Number of terminals	1
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40

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Bulletin I0131J 09/00

IR150DG..HCB SERIES

HIGH POWER RECTIFIER DIODES

Junction Size:

Wafer Size:

RRM

Class:

Passivation Process:

Reference IR Packaged Part:

Square 150 mils

600 and 1200 V

Glassivated MESA

12F Series

Major Ratings and Characteristics

Parameters

RRM

Maximum Forward Voltage

Reverse Breakdown Voltage Range

Units

1100 mV

600 and 1200 V

Test Conditions

= 25°C I

= 25A

= 25°C I

= 100µA

(1)

Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

150 x 150 mils (see drawing)

100 mm, with std. < 110 > flat

300 µm

130 µm

0.25 mm diameter minimum

See drawing

Storage in original container, in dessicated

nitrogen, with no contamination

IR150DG06HCBPBF Related Products

	IR150DG06HCBPBF	IR150DG12HCBPBF
Description	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1	Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, DIE-1
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	DIE	DIE
package instruction	S-XUUC-N1	S-XUUC-N1
Contacts	1	1
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
application	HIGH POWER	HIGH POWER
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	S-XUUC-N1	S-XUUC-N1
Number of components	1	1
Phase	1	1
Number of terminals	1	1
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260	260
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	1200 V
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	40	40

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