Bulletin I27294 12/06
IRKDS201/045P
SCHOTTKY RECTIFIER
Description/ Features
The IRKDS201.. Schottky rectifier doubler module has been optimized for
low reverse leakage at high temperature. The proprietary barrier technology
allows for reliable operation up to 175°C junction temperature. Typical
applications are in high current switching power supplies, plating power
supplies, UPS systems, converters, free-wheeling diodes, welding, and
reverse battery protection.
175°C T
J
operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
UL pending
TOTALLY LEAD-FREE, RoHS Compliant
-
(3)
(1)
100 Amp
~
+
(2)
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of sur-
face roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 100Apk, T
J
=125°C
range
Values
100
45
8600
0.65
- 55 to 175
Units
A
V
A
V
°C
Outline TO-240AA
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1
IRKDS201/ 045P
Bulletin I27295
12/06
Voltage Ratings
Parameters
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
IRKDS201/045P
45
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward
Current
I
FSM
E
AS
I
AR
Surge Current
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
(Per Leg)
Per Module
Per Leg
Values
200
100
8600
1850
270
20
Units
A
Conditions
50% duty cycle @ T
C
= 120 °C, rectangular wave form
5μs Sine or 3μs Rect. pulse
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated V
RRM
applied
Max. Peak One Cycle Non-Repetitive
A
mJ
A
T
J
= 25 °C, I
AS
= 24 Amps, L = 1mH
Current decaying linearly to zero in 1
μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
Values Units
0.7
0.92
0.65
0.86
V
V
V
V
mA
mA
pF
nH
V
@ 100A
@ 200A
@ 100A
@ 200A
T
J
= 25 °C
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
C
T
L
S
V
INS
Max. Reverse Leakage Current
(1)
Max. Junction Capacitance
Typical Series Inductance
RMS isolation voltage (1 sec)
10
90
5200
7.0
10000
3500
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
From top of terminal hole to mounting plane
50 Hz, circuit to base, all terminals shorted
(1) Pulse Width < 500μs
dv/dt Max. Voltage Rate of Change
V/
μs
(Rated V
R
)
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
Values
-55 to 175
-55 to 175
0.6
0.1
Units
°C
°C
Conditions
R
thJC
Max. Thermal Resistance, Junction
to Case (Per Leg)
R
thCS
Max. Thermal Resistance, case
to Heatsink
wt
T
Approximate Weight
Mounting Torque ± 10%
Case Style
to heatsink
busbar
°C/W DC operation
°C/W Mounting Surface, smooth and greased
110 (4)
gr (oz)
5
Nm
4
TO - 240AA
JEDEC
2
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IRKDS201/ 045P
Bulletin I27294
12/06
1000
Reverse Current - I
R
(mA)
1000
175°C
100
125C
10
1
0.1
0.01
0.001
5
10
15
20
25
30
35
40
45
Tj = 175°C
Instantaneous Forward Current - I
F
(A)
25°C
100
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
10000
10
Tj = 125°C
Junction Capacitance - C
T
(pF)
Tj = 25˚C
Tj = 25°C
1
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
1
1000
0
10
20
30
40
50
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
D = 0.33
D = 0.25
0.1
D = 0.2
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
1E+01
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IRKDS201/ 045P
Bulletin I27295
12/06
180
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
100
Square wave (D=0.50)
80% rated Vr applied
160
140
120
100
80
60
40
20
0
0
50
100
see note (2)
80
60
40
20
0
180°
120°
90°
60°
30°
DC
DC
RMS Limit
150
200
250
300
0
30
60
90
120
150
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
10000
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
1000
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
L
HIGH-S
PEED
S CH
WIT
FREE-WHEEL
DIODE
40HF
L40S
02
+
DUT
IR P460
F
R = 25 ohm
g
Vd = 25 Volt
CURR
ENT
MONIT
OR
Fig. 8 - Unclamped Inductive Test Circuit
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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IRKDS201/ 045P
Bulletin I27294
12/06
Outline Table
Dimensions are in millimeters and [inches]
Ordering Information Table
Device Code
IR
1
1
2
3
4
5
6
7
KD
2
-
-
-
-
-
-
-
S
3
20
4
1
5
/
045
6
P
7
International Rectifier
Circuit Configuration
KC = Add-A-Pak - 2 diodes in Series
S = Schottky Diode
Average Rating (x10)
Product Silicon Identification
Voltage Rating (045 = 45V)
Lead-Free
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5
Microcontroller MCU
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