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MT3S06U(TE85L)

Description
TRANSISTOR,BJT,NPN,5V V(BR)CEO,15MA I(C),TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size111KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

MT3S06U(TE85L) Overview

TRANSISTOR,BJT,NPN,5V V(BR)CEO,15MA I(C),TO-236AB

MT3S06U(TE85L) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.015 A
ConfigurationSingle
Minimum DC current gain (hFE)70
Maximum operating temperature125 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.06 W
surface mountYES
Nominal transition frequency (fT)7000 MHz

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