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IDT70V657S12DRI

Description
Dual-Port SRAM, 32KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
Categorystorage    storage   
File Size191KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT70V657S12DRI Overview

Dual-Port SRAM, 32KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208

IDT70V657S12DRI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeQFP
package instruction28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
Contacts208
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeS-PQFP-G208
JESD-609 codee0
length28 mm
memory density1179648 bit
Memory IC TypeDUAL-PORT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals208
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFQFP
Encapsulate equivalent codeQFP208,1.2SQ,20
Package shapeSQUARE
Package formFLATPACK, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height4.1 mm
Maximum standby current0.015 A
Minimum standby current3.15 V
Maximum slew rate0.515 mA
Maximum supply voltage (Vsup)3.45 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationQUAD
Maximum time at peak reflow temperature20
width28 mm
HIGH-SPEED 3.3V 32K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
Features
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V657 easily expands data bus width to 72 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
x
x
x
PRELIMINARY
IDT70V657S
x
x
x
x
x
x
x
x
x
x
x
x
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
LVTTL-compatible, single 3.3V (±150mV) power supply
for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in 208-pin Plastic Quad Flatpack, 208-ball fine
pitch Ball Grid Array and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
BE
3L
BE
2L
BE
3 R
BE
2 R
BE
1R
BE
0R
R/
W
R
B
E
0
L
B
E
1
L
B
E
2
L
B
E
3
L
B
E
3
R
BB
EE
2 1
RR
B
E
0
R
BE
1 L
BE
0L
R/
W
L
CE
0 L
CE1 L
CE
0 R
CE1R
OE
L
OE
R
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
32K x 36
MEMORY
ARRAY
I/O - I/O
0L
35L
Di n_L
Di n_R
I/O - I/O
0R
35R
A14 L
A0 L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
14R
A
0R
CE
0 L
CE1L
OE
L
R/WL
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
0 R
CE1R
OE
R
R/WR
BUSY
R
BUSY
L
SEM
L
INT
L
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5615 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
JUNE 2001
DSC-5615/3
1
©2001 Integrated Device Technology, Inc.

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