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IDT70V7519S133BFG

Description
Dual-Port SRAM, 256KX36, 15ns, PBGA208, FBGA-208
Categorystorage    storage   
File Size226KB,22 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance  
Download Datasheet Parametric View All

IDT70V7519S133BFG Overview

Dual-Port SRAM, 256KX36, 15ns, PBGA208, FBGA-208

IDT70V7519S133BFG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionTFBGA,
Contacts208
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time15 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeS-PBGA-B208
JESD-609 codee1
length15 mm
memory density9437184 bit
Memory IC TypeDUAL-PORT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals208
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX36
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeSQUARE
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.45 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width15 mm
HIGH-SPEED 3.3V 256K x 36
SYNCHRONOUS
BANK-SWITCHABLE
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
Features:
IDT70V7519S
256K x 36 Synchronous Bank-Switchable Dual-ported
SRAM Architecture
64 independent 4K x 36 banks
– 9 megabits of memory on chip
Bank access controlled via bank address pins
High-speed data access
– Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns
(133MHz) (max.)
– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 5ns cycle time, 200MHz operation (14Gbps bandwidth)
– Fast 3.4ns clock to data out
– 1.5ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 200MHz
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
LVTTL- compatible, 3.3V (±150mV) power supply
for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 166MHz and 133MHz
Available in a 208-pin Plastic Quad Flatpack (PQFP),
208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball
Grid Array (BGA)
Supports JTAG features compliant with IEEE 1149.1
Functional Block Diagram
PL/FT
L
OPT
L
CLK
L
ADS
L
CNTEN
L
REPEAT
L
R/W
L
CE
0L
CE
1L
BE
3L
BE
2L
BE
1L
BE
0L
OE
L
PL/FT
R
OPT
R
CLK
R
ADS
R
CNTEN
R
REPEAT
R
R/W
R
CE
0R
CE
1R
BE
3R
BE
2R
BE
1R
BE
0R
OE
R
CONTROL
LOGIC
MUX
4Kx36
MEMORY
ARRAY
(BANK 0)
MUX
CONTROL
LOGIC
I/O
0L-35L
I/O
CONTROL
MUX
4Kx36
MEMORY
ARRAY
(BANK 1)
MUX
I/O
CONTROL
I/O
0R-35R
A
11L
A
0L
BA
5L
BA
4L
BA
3L
BA
2L
BA
1L
BA
0L
ADDRESS
DECODE
ADDRESS
DECODE
A
11R
A
0R
BA
5R
BA
4R
BA
3R
BA
2R
BA
1R
BA
0R
BANK
DECODE
MUX
4Kx36
MEMORY
ARRAY
(BANK 63)
BANK
DECODE
NOTE:
1. The Bank-Switchable dual-port uses a true SRAM
core instead of the traditional dual-port SRAM core.
As a result, it has unique operating characteristics.
Please refer to the functional description on page 19
for details.
MUX
,
TDI
TDO
JTAG
TMS
TCK
TRST
5618 drw 01
JULY 2008
1
DSC 5618/6
©2008 Integrated Device Technology, Inc.

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