To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FK10SM-9
HIGH-SPEED SWITCHING USE
FK10SM-9
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5
1.5
r
2
2
4
20.0
φ
3.2
5.0
1.0
q
5.45
w
e
5.45
19.5MIN.
4.4
0.6
2.8
4
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
¡V
DSS ................................................................................
450V
¡r
DS (ON) (MAX) ..............................................................
0.92Ω
¡I
D .........................................................................................
10A
¡Integrated
Fast Recovery Diode (MAX.) ........150ns
q
TO-3P
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
450
±30
10
30
10
30
125
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
Typical value
MITSUBISHI Nch POWER MOSFET
FK10SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
I
G
=
±100µA,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 450V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
450
±30
—
—
2
—
—
3.3
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3
0.70
3.50
5.5
1100
130
20
20
30
95
35
1.5
—
—
Max.
—
—
±10
1
4
0.92
4.60
—
—
—
—
—
—
—
—
2.0
1.00
150
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 200V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 5A, V
GS
= 0V
Channel to case
I
S
= 10A, d
is
/d
t
= –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
tw=10µs
100µs
1ms
10ms
DC
160
120
80
40
0
0
50
100
150
200
10
–1
7
5
0
10 2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
T
C
= 25°C
Single Pulse
CASE TEMPERATURE T
C
(°C)
MITSUBISHI Nch POWER MOSFET
FK10SM-9
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
10V
7V
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
=20V 10V 6V
P
D
= 125W
20
10
6V
DRAIN CURRENT I
D
(A)
8
DRAIN CURRENT I
D
(A)
16
T
C
= 25°C
Pulse Test
5V
P
D
=
125W
4V
0
0
10
20
30
40
50
5V
6
T
C
= 25°C
Pulse Test
12
8
4
4
2
4V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
T
C
= 25°C
Pulse Test
32
2.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
T
C
= 25°C
Pulse Test
1.6
V
GS
= 10V
1.2
20V
24
I
D
= 15A
16
10A
8
5A
0
0
4
8
12
16
20
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
1
7
5
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
3
2
10
0
7
5
3
2
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
V
DS
= 10V
Pulse Test
T
C
=25°C
DRAIN CURRENT I
D
(A)
16
75°C
125°C
12
8
4
0
0
4
8
12
16
20
10
–1 –1
10
2 3
5 7 10
0
2 3
5 7 10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-9
HIGH-SPEED SWITCHING USE
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10
3
7
5
3
2
10
2
7
5
3
2
Coss
Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
10
–1
2 3
5 7 10
0
2 3
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
CAPACITANCE
Ciss, Coss, Crss (pF)
t
d(off)
t
f
t
r
t
d(on)
5 7 10
1
10
1
Crss
Tch = 25°C
7 f = 1MHz
5 V
GS
= 0V
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
SOURCE CURRENT I
S
(A)
20
Tch = 25°C
I
D
= 10A
16
V
DS
= 100V
200V
12
400V
8
V
GS
= 0V
Pulse Test
32
24
T
C
=125°C
16
25°C
75°C
4
8
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0
50
100
150
200
250
5.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
4.0
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
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