Power Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL PACKAGE-2
| Parameter Name | Attribute value |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 16 A |
| Maximum drain-source on-resistance | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AA |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 48 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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