BC109BLEADFREE datasheet, PDF - EEWORLD Datasheet

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BC109BLEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,; CategoryDiscrete semiconductor The transistor; File Size539KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BC109BLEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,

BC109BLEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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BC107,A,B

BC108B,C

BC109B,C

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC107, BC108,

BC109 series types are small signal NPN silicon

transistors, manufactured by the epitaxial planar

process, designed for general purpose amplifier

applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg



JC

BC107

50

45

6.0

BC108

BC109

30

25

5.0

200

600

-65 to +200

175

UNITS

V

mA

mW

°C

°C/W

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=45V (BC107)

VCB=45V, TA=125°C (BC107)

VCB=25V (BC108, BC109)

VCB=25V, TA=125°C (BC108, BC109)

IC=2.0mA (BC107)

IC=2.0mA (BC108, BC109)

IE=10μA (BC107)

IE=10μA (BC108, BC109)

IC=10mA, IB=0.5mA

IC=100mA, IB=5.0mA

IC=10mA, IB=0.5mA

IC=100mA, IB=5.0mA

VCE=5.0V,

IC=2.0mA

IC=10mA

IC=10μA (BC107B, BC108B, BC109B)

IC=10μA (BC108C, BC109C)

0.55

40

100

45

25

6.0

5.0

TYP

MAX

15

4.0

15

4.0

UNITS

nA

μA

nA

μA

V

0.25

0.7

1.0

0.6

0.83

1.05

0.7

0.77

IC=2.0mA (BC107)

110

IC=2.0mA (BC107A)

110

IC=2.0mA (BC107B, BC108B, BC109B) 200

420

450

220

450

800

VCE=5.0V, IC=2.0mA (BC108C, BC109C)

R1 (16-August 2012)

BC109BLEADFREE Related Products

	BC109BLEADFREE	BC108BLEADFREE	BC109CLEADFREE	BC108CLEADFREE	BC107BLEADFREE
Description	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	200	420	420	200
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Maker	Central Semiconductor	Central Semiconductor	-	Central Semiconductor	Central Semiconductor
Base Number Matches	-	1	1	1	-

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