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BUX39

Description
Bipolar Transistors;NPN;30A;90V;TO-3
File Size206KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BUX39 Overview

Bipolar Transistors;NPN;30A;90V;TO-3

BUX39 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
DESCRIPTION
·Low
Collector Saturation Voltage-
·High
Switching Speed
·High
Current Current Capability
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for switching-control amplifiers, power gates,
switching regulators, power switching circuits converters,
inverters and control circuits.
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEX
V
CER
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
V
BE
= -1.5V
Collector-Emitter Voltage
R
BE
= 100Ω
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
120
120
110
90
7
30
40
6
120
200
-65~200
UNIT
V
V
V
V
V
A
A
A
W
BUX39
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.46
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
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