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BDX18NR1

Description
Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BDX18NR1 Overview

Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

BDX18NR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage70 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee1
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)0.8 MHz
BDX18N
Dimensions in mm (inches).
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
Bipolar PNP Device in a
Hermetically sealed TO3
Metal Package.
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
22.23
(0.875)
max.
16.64 (0.655)
17.15 (0.675)
1
2
Bipolar PNP Device.
V
CEO
= 70V
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
I
C
= 15A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
70
15
Units
V
A
-
Hz
@ 4/4 (V
CE
/ I
C
)
20
0.8M
70
117
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
31-Jul-02

BDX18NR1 Related Products

BDX18NR1 BDX18N
Description Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it Rohs certified? conform to incompatible
Maker TT Electronics plc TT Electronics plc
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A 15 A
Collector-emitter maximum voltage 70 V 70 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 20 20
JEDEC-95 code TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 0.8 MHz 0.8 MHz
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