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•
Suitable for Transformerless, Line–Operated Equipment
•
Thermopad
{
Construction Provides High Power Dissipation Rating for High
Reliability
. . . designed for power output stages for television, radio, phonograph and other
consumer product applications.
Plastic Medium Power NPN
Silicon Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ON CHARACTERISTICS
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(At rated voltage)
Collector–Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current — Continuous
Peak
Emitter–Base Voltage
Collector–Base Voltage
Collector–Emitter Voltage
Characteristic
Rating
Characteristic
Symbol
TJ, Tstg
VCEO
VCB
VEB
PD
IC
IB
Symbol
θ
JC
BD 157
275
250
– 65 to + 150
BD 158
Symbol
BVCEO
ICBO
IEBO
0.25
20
0.16
325
300
hFE
0.5
1.0
5.0
6.25
Max
BD 159
375
350
BD 157
BD 158
BD 159
Type
3–162
Motorola Bipolar Power Transistor Device Data
_
C/W
Watts
W/
_
C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
Min
250
300
350
30
—
—
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 – 300 – 350 VOLTS
20 WATTS
BD157
BD158
BD159
CASE 77–08
TO–225AA TYPE
Max
240
100
100
—
µAdc
µAdc
Unit
Vdc
—
BD157 BD158 BD159
25
PD, POWER DISSIPATION (WATTS)
1.0
V, VOLTAGE (VOLTS)
20
0.8
VBE @ IC/IB = 10
VBE @ VCE = 10 V
0.6
15
0.4
VCE(sat) @ IC/IB = 10
0.2
IC/IB = 5.0
TJ = + 25°C
10
5.0
0
20
40
60
80
100
120
140
160
0
10
20
TC, CASE TEMPERATURE (°C)
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 1. Power–Temperature Derating Curve
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (AMPS)
1.0
0.7
0.5
0.3
0.2
TJ = 150°C
1.0 ms
dc
500
µs
10
µs
0.1
0.07
0.05
0.03
0.02
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
BD157
BD158
BD159
10
20
30
50
100
200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
300
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, power–tempera-
ture derating must be observed for both steady state and
pulse power conditions.
0.01
Figure 3. DC Safe Operating Area
300
200
hFE, DC CURRENT GAIN
TJ = 150°C
100
70
50
30
20
– 55°C
+ 100°C
+ 25°C
VCE = 10 V
VCE = 2.0 V
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
70
100
200
300
500
Figure 4. Current Gain
Motorola Bipolar Power Transistor Device Data
3–163
CASE 221D
Isolated TO–220 Type
UL Recognized
File #E69369
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Table 1. Plastic (Isolated TO–220 Type)
Device Type
ICCont
Amps
Max
1
2
VCEO(sus)
Volts
Min
250
400
700
1000
3
5
100
100
400
450
700
1000
1000
550
6
400
450
8
80
150
400
700
1200
700
1000
VCES
Volts
Min
hFE
Min/Max
30/150
14/34
14/34
@ IC
Amp
0.3
0.2
0.2
1
3
0.3
.005
0.3
0.5
0.5
0.5
2
3
5
1
1
4
4
3
1.5
8
Resistive Switching
ts
µs
Max
2 typ
2.75(3)
2.75(3)
0.6
1.5 typ
1.7(3)
4
1.7(3)
2.75(3)
2.5(3)
3.2(3)
0.5 typ
1 typ
3
2.5(3)
2.75(3)
—
0.5 typ
1.5 typ
2.75(3)
3
tf
µs
Max
0.17 typ
0.2(3)
0.175(3)
0.3
1.5 typ
0.15(3)
0.8
0.15(3)
0.2(3)
0.15(3)
0.15(3)
0.13 typ
0.15 typ
0.7
0.18(3)
0.18(3)
—
0.14 typ
1.5 typ
0.2(3)
0.7
3
8
@ IC
Amp
0.3
1
1
1
3
1
2.5
1
2
3
3
2
3
5
2
2
—
5
13 typ
12
14 typ
14 typ
4
30
4
14 typ
13 typ
2
40
20(1)
12
8
fT
MHz
Min
10
13 typ
13 typ
3
4(1)
12 typ
PD (Case)
Watts
@ 25°C
28
25
25
28
28
35
40
35
35
40
40
35
35
40
45
45
40
35
40
50
40
NPN
PNP
MJF47
BUL44F
MJF18002
MJF31C
MJF122
(2)
BUL45F
BUT11AF
MJF18004
MJF18204
BUL146F
MJF18006
MJF6107
MJF15030
MJF13007
BUL147F
MJF15031
MJF32C
MJF127
(2)
10 min
2000 min
14/34
10 min
14/34
18/35
14/34
14/34
30/90
40 min
5/30
14/34
16/34
450
10
60
80
100
450
12
400
1000
MJF18008
MJF3055
MJF44H11
MJF6388
(2)
MJF2955
MJF45H11
MJF6668
(2)
20/100
40/100
3k/20k
14/34
6/30
1000
700
MJF18009
MJF13009
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Bipolar Power Transistor Device Data
Selector Guide
2–3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
4
Table 2. Plastic TO–220AB
Device Type
ICCont
Amps
Max
0.5
VCEO(sus)
Volts
Min(8)
350
hFE
Min/Max
15 min
40 min
TIP30C
15/75
30/150
MJE5730
30/150
30/150
30/150
500 min
14/36
30
14/34
3 min
BD242B
BD242C
25 min
25 min
25 min
50/200
@ IC
Amp
0.1
0.1
1
0.3
0.3
0.3
0.3
2
0.4
0.1
0.2
1
1
1
1
0.5
0.6 typ
0.6 typ
2 typ
2 typ
2 typ
2 typ
1.7 typ
2.75(3)
3.5
3(3)
4 typ
ts
µs
Max
1
2
3
CASE 221A–06
(TO–220AB)
PD
(Case)
Watts
@ 25°C
30
30
30
40
40
40
40
50
50
50
40
80
3
3
40
40
40
40
Resistive Switching
tf
µs
Max
@ IC
Amp
fT
MHz
Min
10 typ
10 typ
0.3 typ
0.18 typ
0.18 typ
0.18 typ
0.18 typ
1.3 typ
0.175(3)
1.4
0.17(3)
0.8 typ
1
0.3
0.3
0.3
0.3
2
1
1
1
1
3
10
10
10
10
25(1)
13 typ
4
12 typ
NPN
MJE2360T
PNP
MJE2361T
1
100
250
300
350
400
2
100
400/700
450/1000
450/1000
900/1800
3
80
100
TIP29C
TIP47
TIP48
TIP49
TIP50
TIP112
(2)
BUL44
BUX85
MJE18002
MJE1320
BD241B
BD241C
MJE5731
MJE5731A
(7)
TIP117
(2)
TIP31C
150
TIP32C
MJE9780
0.3 typ
1
3
5 typ
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)V
CEO = 375 V
(8)When 2 voltages are given, the format is V
CEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
Selector Guide
2–4
Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB (continued)
Device Type
ICCont
Amps
Max
4
VCEO(sus)
Volts
Min(8)
40
60
80
400/700
5
100
250
300
400/700
450/1000
450/850
450/1000
550/1200
6
80
100
hFE
Min/Max
45/100
750 min
40/120
6/30
@ IC
Amp
4
1.5
0.2
3
3
2.5
2.5
0.3
5
5
0.3
0.5
3
3
3
6
0.5
0.5
3
2.5
2
3
1.5
1.5
2.5
0.75
0.75
5
5
3
1.5 typ
1.8
1.8
1.7(3)
3
2.7
1.7
2.75(3)
0.4 typ
0.4 typ
0.4 typ
1.5(2)
1.75(3)
3.2(3)
0.4 typ
0.4 typ
0.4 typ
0.7
1.5 typ
0.8
0.8
0.15(3)
0.3
0.35
0.15
0.2(3)
0.15 typ
0.15 typ
0.15 typ
0.15(2)
0.15(3)
0.13(3)
0.15 typ
0.15 typ
0.15 typ
1
3
4
2.5
2.5
1
3
3
1.0
2
3
3
3
1
3
3
3
3
3
13
12
3
3
3
10
14 typ
14 typ
4
4
4
3
10
10
7.5
Resistive Switching
ts
µs
Max
tf
µs
Max
@ IC
Amp
fT
MHz
Min
5
1(1)
40 typ
4
4(1)
5
5
12 typ
PD
(Case)
Watts
@ 25°C
75
40
30
60
75
80
80
75
80
80
75
75
65
65
65
80
100
100
40
40
40
65
60
60
75
NPN
PNP
MJE1123
MJE800
(2)
D44C12
MJE13005
TIP122
(2)
2N6497
MJE700
(2)
D45C12
TIP127
(2)
1k min
10/75
10/75
14/34
5 min
7 min
14/34
18/35
2N6498
BUL45
MJE16002
MJE16004
MJE18004
MJE18204
BD243B
BD243C
TIP41C
BD244B
BD244C
TIP42C
15 min
15 min
15/75
5 min
14/34
14/34
250/550
400/700
450/1000
7
30
50
70
100
150
200
450
MJE16204
BUL146
MJE18006
2N6288
2N6111
2N6109
30/150
30/150
30/150
15 min
30 min
30 min
250 min
2N6292
BD801
BU407
2N6107
BD802
BU406
BU522B
(2)
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)V
CEO = 375 V
(8)When 2 voltages are given, the format is V
CEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Bipolar Power Transistor Device Data
Selector Guide
2–5
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