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BU406H

Description
Bipolar Transistors;NPN;7A;200V;TO-220
File Size211KB,2 Pages
ManufacturerInchange Semiconductor
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BU406H Overview

Bipolar Transistors;NPN;7A;200V;TO-220

BU406H Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
BU406H
DESCRIPTION
·High
Voltage: V
CEV
= 400V(Min)
·Low
Saturation Voltage-
: V
CE(sat)
= 1.0V(Max.)@ I
C
= 5A
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
CP
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Repetitive
Collector Current- Peak (10ms)
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
400
200
6
7
10
15
4
60
150
-55~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.08
70
UNIT
℃/W
℃/W
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www.iscsemi.com
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