Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
| package instruction | , |
| Reach Compliance Code | unknown |
| Maximum drain current (Abs) (ID) | 27 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Number of components | 1 |
| Maximum operating temperature | 150 °C |
| Maximum power dissipation(Abs) | 310 W |
