BUK617-500BE datasheet, PDF - EEWORLD Datasheet

BUK617-500BE: DescriptionPower Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size341KB，5 Pages; ManufacturerNorth American Philips Discrete Products Div

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BUK617-500BE Overview

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Maker	North American Philips Discrete Products Div
package instruction	,
Reach Compliance Code	unknown
Maximum drain current (Abs) (ID)	27 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	310 W

	BUK617-500BE	BUK617-500AE
Description	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
Maker	North American Philips Discrete Products Div	North American Philips Discrete Products Div
Reach Compliance Code	unknown	unknow
Maximum drain current (Abs) (ID)	27 A	29 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Number of components	1	1
Maximum operating temperature	150 °C	150 °C
Maximum power dissipation(Abs)	310 W	310 W

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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