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BSP318SL6327

Description
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size415KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSP318SL6327 Overview

Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP318SL6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)60 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)2.6 A
Maximum drain current (ID)2.6 A
Maximum drain-source on-resistance0.15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)10.4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Rev 2.4
BSP318S
SIPMOS
®
Small-Signal-Transistor
Features
N-Channel
Product Summary
  Drain
source voltage
V
DS
60
0.09
2.6
V
A
Enhancement mode
Avalanche rated
Logic Level
dv/dt rated
Drain-Source on-state resistance
R
DS(on)
Continuous drain current
I
D
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
Halogen­free according to IEC61249­2­21
4
3
2
1
VPS05163
Type
Package
Tape and Reel
Marking
Packaging
Non dry
BSP318S
PG-SOT223
H6327:
1000 pcs/r
BSP318S
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
I
D
2.6
A
Pulsed drain current
I
D puls
10.4
T
A
= 25 °C
Avalanche energy, single pulse
E
AS
60
mJ
I
D
= 2.6 A,
V
DD
= 25 V,
R
GS
= 25
Avalanche current,periodic limited by
T
jmax
Avalanche energy, periodic limited by
T
jmax
I
AR
2.6
A
E
AR
dv/dt
0.18
mJ
Reverse diode dv/dt
6
kV/µs
I
S
= 2.6 A,
V
DS
= 20 V, di/dt = 200 A/µs,
T
jmax
= 150 °C
Gate source voltage
V
GS
±20
V
Power dissipation
P
tot
1.8
W
T
A
= 25 °C
Operating and storage temperature
T
j ,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Page 1
55/150/56
Class 1b
2012-11-28
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