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BCP55E6433

Description
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size109KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BCP55E6433 Overview

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin

BCP55E6433 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
ConfigurationSINGLE
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

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Index Files: 2313  169  838  1586  167  47  4  17  32  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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