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2N5855

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size314KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

2N5855 Overview

Transistor

2N5855 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)50
JESD-609 codee0
Maximum operating temperature135 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.75 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)100 MHz
Base Number Matches1
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