MBM29F800T-90PFTN datasheet, PDF

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MBM29F800T-90PFTN: DescriptionFlash, 1MX8, 90ns, PDSO48, PLASTIC, TSOP1-48; Categorystorage storage; File Size402KB，49 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MBM29F800T-90PFTN Overview

Flash, 1MX8, 90ns, PDSO48, PLASTIC, TSOP1-48

MBM29F800T-90PFTN Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	FUJITSU
package instruction	PLASTIC, TSOP1-48
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	90 ns
Other features	MINIMUM 100000 WRITE/ERASE CYCLES; ALSO CONFIGURABLE AS 512K X 16; AUTOMATIC WRITE
Spare memory width	8
startup block	TOP
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G48
JESD-609 code	e0
length	18.4 mm
memory density	8388608 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	1,2,1,15
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature	-20 °C
organize	1MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	12 mm

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05–20816–2E

FLASH MEMORY

CMOS

8M (1M

8/512K

16)

MBM29F800T/MBM29F800B

DISTINCTIVE CHARACTERISTICS

• Single 5.0 V read, write, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E

PROMs

• Compatible with JEDEC-standard word-wide pinouts

48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

44-pin SOP (Package suffix: PF)

• Minimum 100,000 write/erase cycles

• High performance

90 ns maximum access time

• Sector erase architecture

One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

T=Top sector

B=Bottom sector

• Embedded Erase™ Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program™ Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready-Busy output (RY/BY)

Hardware method for cletection of program or erase cycle completion

• Low power consumption

20 mA typical active read current for Byte Mode

28 mA typical active read current for Word Mode

30 mA typical write/erase current

µA

typical standby current

• Low Vcc write inhibit

≤

3.2 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

(Continued)

Embedded Erase™and Embedded Program™ are trademarks of Advanced Micro Devices, Inc.

MBM29F800T/800B

GENERAL DESCRIPTION

The MBM29F800T/B is a 8M-bit, 5.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of

16 bits each. The MBM29F800T/B is offered in a 48-pin TSOP and 44-pin SOP packages. This device is designed

to be programmed in-system with the standard system 5.0 V V

supply. A 12.0 V V

is not required for write or

erase operations. The device can also be reprogrammed in standard EPROM programmers.

The standard MBM29F800T/B offers access times 90 ns and 120 ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus contention the device has separate chip enable (

), write enable

(

), and output enable (

) controls.

The MBM29F800T/B is pin and command set compatible with JEDEC standard. Commands are written to the

command register using standard microprocessor write timings. Register contents serve as input to an internal

state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and

data needed for the programming and erase operations. Reading data out of the device is similar to reading from

12.0 V Flash or EPROM devices.

The MBM29F800T/B is programmed by executing the program command sequence. This will invoke the Embed-

ded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies

proper cell margin. Typically, each sector can be programmed and verified in less than one second. Erase is accom-

plished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an

internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase

operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

Any individual sector is typically erased and verified in 1.0 seconds (if already completely preprogrammed.)

This device also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29F800T/B is erased when shipped from the factory.

The device features single 5.0 V power supply operation for both read and write functions. Internally generated and

regulated voltages are provided for the program and erase operations. A low V

detector automatically inhibits

write operations on the loss of power. The end of program or erase is detected by

Data

Polling of DQ

, by the

Toggle Bit feature on DQ

, or the RY/

output pin. Once the end of a program or erase cycle has been completed,

the device internally resets to the read mode.

Fujitsu’s Flash technology combines years of EPROM and E

PROM experience to produce the highest levels of

quality, reliability, and cost effectiveness. The MBM29F800T/B memory electrically erases the entire chip or all bits

within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at

a time using the EPROM programming mechanism of hot electron injection.

MBM29F800T-90PFTN Related Products

	MBM29F800T-90PFTN	MBM29F800B-90PFTR	MBM29F800B-90PF	MBM29F800T-90PFTR	MBM29F800T-12PFTN
Description	Flash, 1MX8, 90ns, PDSO48, PLASTIC, TSOP1-48	Flash, 1MX8, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48	Flash, 1MX8, 90ns, PDSO44, PLASTIC, SOP-44	Flash, 1MX8, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48	Flash, 1MX8, 120ns, PDSO48, PLASTIC, TSOP1-48
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU
package instruction	PLASTIC, TSOP1-48	PLASTIC, REVERSE, TSOP1-48	PLASTIC, SOP-44	PLASTIC, REVERSE, TSOP1-48	PLASTIC, TSOP1-48
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	90 ns	90 ns	90 ns	90 ns	120 ns
Other features	MINIMUM 100000 WRITE/ERASE CYCLES; ALSO CONFIGURABLE AS 512K X 16; AUTOMATIC WRITE	MINIMUM 100K WRITE/ERASE CYCLES; CAN ALSO BE CONFIGURED AS 512K X 16	MINIMUM 100K WRITE/ERASE CYCLES; CAN ALSO BE CONFIGURED AS 512K X 16	MINIMUM 100000 WRITE/ERASE CYCLES; ALSO CONFIGURABLE AS 512K X 16; AUTOMATIC WRITE	MINIMUM 100K WRITE/ERASE CYCLES; CAN ALSO BE CONFIGURED AS 512K X 16
Spare memory width	8	8	8	8	8
startup block	TOP	BOTTOM	BOTTOM	TOP	TOP
command user interface	YES	YES	YES	YES	YES
Data polling	YES	YES	YES	YES	YES
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G48	R-PDSO-G48	R-PDSO-G44	R-PDSO-G48	R-PDSO-G48
JESD-609 code	e0	e0	e0	e0	e0
length	18.4 mm	18.4 mm	28.45 mm	18.4 mm	18.4 mm
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	8	8	8	8	8
Number of functions	1	1	1	1	1
Number of departments/size	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15
Number of terminals	48	48	44	48	48
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
Minimum operating temperature	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C
organize	1MX8	1MX8	1MX8	1MX8	1MX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1-R	SOP	TSOP1-R	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20	TSSOP48,.8,20	SOP44,.63	TSSOP48,.8,20	TSSOP48,.8,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V
Programming voltage	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
ready/busy	YES	YES	YES	YES	YES
Maximum seat height	1.2 mm	1.2 mm	2.5 mm	1.2 mm	1.2 mm
Department size	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K
Maximum standby current	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	1.27 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
switch bit	YES	YES	YES	YES	YES
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	12 mm	12 mm	13 mm	12 mm	12 mm

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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