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MMBT3906

Description
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size355KB,5 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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MMBT3906 Overview

200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR

MMBT3906 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum on-time70 ns
Maximum off time300 ns
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.2000 W
Transistor typeUniversal small signal
Minimum DC amplification factor30
Rated crossover frequency300 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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MMBT3906
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material:Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Capable of 300mWatts of Power Dissipation
Marking:2A
Symbol
Rating
Rating
Unit
PNP General
Purpose Amplifier
V
V
V
A
Maximum Ratings
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
-40
-40
-5.0
-0.2
SOT-23
A
D
C
C
B
P
D
T
J
T
STG
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
c
BO
I
CEX
I
EBO
h
FE
Power Dissipation
Operating Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=-1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-10µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-10µAdc, I
C
=0)
Collector cut-off Current
(V
CB
=-40Vdc,
I
E
=0
Collector Cut-off Current
(V
CE
=-30Vdc, V
BE
=-3.0Vdc)
Emitter cut-off Current
(V
EB
=-5Vdc,
I
C
=0
DC Current Gain*
(I
C
=-10mAdc, V
CE
=-1.0Vdc)
(I
C
=-50mAdc, V
CE
=-1.0Vdc)
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
Outpuut Capacitance
(V
CB
=-5.0Vdc,
f=1.0MHz,I
E
=0)
Inpuut Capacitance
(V
EB
=-0.5Vdc,
f=1.0MHz,I
C
=0)
Current Gain-Bandwidth Product
(I
C
=-10mAdc, V
CE
=-20Vdc, f=100MHz)
Noise Figure
(V
CE
=-5.0V,
f=1.0kHz,I
C
=-100uA,Rs=1.0K)
Delay Time
(V
CC
=-3.0Vdc, V
BE
=-0.5Vdc
Rise Time
I
C
=-10mAdc, I
B1
=-1.0mAdc)
Storage Time
(V
CC
=-3.0Vdc, I
C
=-10mAdc
Fall Time
I
B1
=I
B2
=-1.0mAdc )
300µs, Duty Cycle
2.0%
0.3
-55 to +150
-55 to +150
Min
-40
-40
-5.0
-0.1
-50
-0.1
W
O
C
O
C
F
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Max
Units
Vdc
Vdc
Vdc
uAdc
nAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
G
B
E
E
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
100
60
30
300
V
CE(sat)
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
-0.25
-0.4
-0.65
-0.85
-0.95
4.5
10
Vdc
V
BE(sat)
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
Vdc
pF
pF
Cobo
Cibo
f
T
NF
250
4.0
MHz
dB
.037
.950
.037
.950
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
*Pulse Width
35
35
225
75
ns
ns
ns
ns
www.mccsemi.com
Revision:
9
1
of
5
2010/06/24

MMBT3906 Related Products

MMBT3906 MMBT3906_10
Description 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3
Transistor polarity PNP PNP
Maximum on-time 70 ns 70 ns
Maximum off time 300 ns 300 ns
Maximum collector current 0.2000 A 0.2000 A
Maximum Collector-Emitter Voltage 40 V 40 V
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Maximum ambient power consumption 0.2000 W 0.2000 W
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 30 30
Rated crossover frequency 300 MHz 300 MHz

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