MMBT4401_08 datasheet, PDF - EEWORLD Datasheet

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MMBT4401_08: Description600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size87KB，4 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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MMBT4401_08 Overview

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR

MMBT4401_08 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum on-time	35 ns
Maximum off time	255 ns
Maximum collector current	0.6000 A
Maximum Collector-Emitter Voltage	40 V
Processing package description	SOT-23, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Transistor type	Universal small signal
Minimum DC amplification factor	40
Rated crossover frequency	250 MHz

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

MMBT4401

Features

•

Surface Mount SOT-23 Package

Capable of 350mWatts of Power Dissipation

Operating and Storage Junction Temperatures: -55

=600mA

Marking:2X/M4A

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

to 150

NPN General

Purpose Amplifier

SOT-23

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage*

=1.0mAdc, I

=0)

Collector-Base Breakdown Voltage

=10mAdc, I

=0)

Emitter-Base Breakdown Voltage

=0.1mAdc, I

=0)

Base Cutoff Current

=35Vdc, V

=0.4Vdc)

Collector Cutoff Current

=35Vdc, V

=0.4Vdc)

DC Current Gain*

=0.1mAdc, V

=1.0Vdc)

=1.0mAdc, V

=1.0Vdc)

=10mAdc, V

=1.0Vdc)

=150mAdc, V

=1.0Vdc)

=500mAdc, V

=1.0Vdc)

Collector-Emitter Saturation Voltage

=150mAdc, I

=15mAdc)

=500mAdc, I

=50mAdc)

Base-Emitter Saturation Voltage

=150mAdc, I

=15mAdc)

=500mAdc, I

=50mAdc)

Current Gain-Bandwidth Product

=20mAdc, V

=10Vdc, f=100MHz)

Collector-Base Capacitance

=5.0Vdc, I

=0, f=1.0MHz)

Emitter-Base Capacitance

=0.5Vdc, I

=0, f=1.0MHz)

Delay Time

=30Vdc, V

=0.2Vdc

Rise Time

=150mAdc, I

=15mAdc)

Storage Time

=30Vdc, I

=150mAdc

Fall Time

=15mAdc)

≤

300µs, Duty Cycle

≤

2.0%

Min

6.0

0.1

Max

Units

Vdc

µAdc

OFF CHARACTERISTICS

(BR)CEO

(BR)CBO

(BR)EBO

CEX

µAdc

DIMENSIONS

ON CHARACTERISTICS

100

DIM

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

300

CE(sat)

0.4

0.75

0.95

1.2

Vdc

BE(sat)

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Vdc

SMALL-SIGNAL CHARACTERISTICS

250

6.5

30.0

225

MHz

.035

.900

Suggested Solder

Pad Layout

.031

.800

.079

2.000

SWITCHING CHARACTERISTICS

*Pulse Width

inches

.037

.950

.037

.950

www.mccsemi.com

Revision: 6

1 of 4

2008/01/01

MMBT4401_08 Related Products

	MMBT4401_08	MMBT4401
Description	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3
Transistor polarity	NPN	NPN
Maximum on-time	35 ns	35 ns
Maximum off time	255 ns	255 ns
Maximum collector current	0.6000 A	0.6000 A
Maximum Collector-Emitter Voltage	40 V	40 V
Processing package description	SOT-23, 3 PIN	SOT-23, 3 PIN
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE Tin	MATTE Tin
Terminal location	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	single	single
Number of components	1	1
transistor applications	switch	switch
Transistor component materials	silicon	silicon
Transistor type	Universal small signal	Universal small signal
Minimum DC amplification factor	40	40
Rated crossover frequency	250 MHz	250 MHz

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