2N3913 datasheet, PDF - EEWORLD Datasheet

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2N3913: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size108KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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2N3913 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN

2N3913 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	50 V
Configuration	Single
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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LOW-POWER SILICON PNP

Item

Number

Part Number

Manufacturer

Y(BR)CEO

(V)

hFE

Ic

Max

(A)

fT

(Hz)

Cobo

Max

(F)

ICBO

Max

(A)

Y(BR)CBO

PD

Max

(W)

(V)

Derate

at

(WrC)

Toper

Max

(OC)

Package

Style

V(BR)CEO

2N2605A

BC307C

BC560C

TBC327

BC327-40

BC327P

2SA666A

2SA889

BC857CR

BC860CR

BC557P

>=

30 V, (Cont'd)

See Index

Semelab

Motorola

See Index

Indust Mexi

ToshibaCorp

See Index

FerrantiLtd

Semi Inc

Elec Trans

~emllnc

5

10

~~~::~

15

20

Elec Trans

Advncd Semi

AmperexElec

ITTSemilntr

PhilipsElec

AmperexElec

ITTSemilntr

PhilipsElec

Ferranti Ltd

~prgueElec

45

600

630

700

~gg

700

800

900

1.0k

~~r;r:J1C8

Samsung

:~

50

:,u

50

30m

100m

500m

800m

100m

20m

50m

45M

130M

150M

100M

6.0p

22p

12p

2.7p

2.0n

15n

100n

lOOn

1.0u

1.0U

1.0u

15n

50n

lOOn

60

50

45

~gg~

100M

150M

250M

:~

4.5p

3.0p

50

199~

1.0M

500k

2.0M

1.0M

.70M

1.2M

102M

25M

1.0M

2.0M

40M

150M

300k

96M

130M

150M

20M

~g

50

5Q

60

50

60

400m

300m

500m

625m

800m

625m

150m

350m

200m

500m

350m

250m

2.2m

2.3m

4.0m

3.2m

5.0m

1.5m

3.2m

175 S

150 J

125 J

135 J

150 J

TO·46

TO·92

TO·92var

TO·92

~~~

j

::-g:~~

TO·92

TO·236

TO·92

~~g

j

1.6m

2.7m

1.7m

2.2m

2.8m

2.0m

1.5m

1.6m

1.7m

1.8m

6.4m

1.8m

2.3m

5.3m

3.4m

175 S

150 J

175 S

175J

150 J

175 A

::-g:~~6

TO·5

Can

TO·5

V(BR)CEO

25

2N1921

BCY21

2N3345

2N1440

BCY19

OC203

ST8191

2N1259

BFR81

2N1035

2N1132B46

2SA503

2N3081

NB322E

NB322F

ST8065

KSA812

2SA561

2N3910

2N3913

SK100

>=

50 V

See Index

NthAmerSemi

Hybrid Semi

See Index

Hybrid Semi

NthAmerSemi

SemiconTech

NthAmerSemi

SemiconTech

See Index

Semicoa

See Index

Nat! Semi

Natl Semi

Natl

~eml

Natl Semi

SemiconTech

Samsung

Elec Trans

Indust Mexi

Solid Stlnc

See Index

Semi Ltd

~eelnaex

30

35

~~g;~6

40

10

15

20

25

30

50m

100m

50m

7.0p

45p

25p

5.0p

45p

75p

14p

25p

lOp

6.5p

70p

20p

18p

13p

17p

4.0p

13p

8p

200

33p

9p

lOOp

4.:,p

4.5p

6.0p

4.0p

5.0p

4.0p

4.00

4.()p

4.0p

3.5p

4.0p

40p

12p

13p

~~p

~g~

100m

1.0

50m

600m

1.5

1.:'

1.5

100m

150m

200m

500m

45

~~~~~~

~g

40

~g~

25M

180M

70M

4.0M

100M

liP

20n

5n

50u

.02u

1.5u

.10u

5.0n

5n

200n

lOOn

1.0u

.50u

.01u

500n

~g

50

60

50

70

60

70

55

:,:,

~gg~

1.0u

100n

lOOn

100n

lOOn

.50n

.5n

1.0u

.u~u

50

55

60

50

60

250m

350m

250m

400m

350m

250m

600m

250m

275m

800m

250m

400m

800m

600m

t;uum

600m

150m

300m

500m

400m

800m

g~~

175 S

150 S

150 J

175 J

150 J

::-g:~8

TO·5

TO·92

TO·5

TO·46

TO·39

TO·5

TO·92

~~g

j

5.9m

3.0m

2.9m

2.3m

304m

4.8m

5.0m

6.4m

2.3m

3.3m

2.5m

175 J

125 J

175 S

17:' J

+g:g~

TO·5

SOT·23

TO·98var

TO·46

TO·18

TO·39

TO·92

TO·5

TO·46

TO·5

Can

TO·39

55

60

2SA498

MPS9484

HSE127

2N3840

BCY54

OC207

BEL100P

NB222XX

NB222YX

2SB644

TEC9015A

BC526

2SA1015

2SA1048

TED1602A

2SA1090

2SA1020

BC297

2SA561R

2SA532

2SA659

NB222EG

NB222FG

NB222XG

NB222YG

TED1602B

2SB642

HSE226

~;~:~8

65

~g~~~~~

70

ToshibaCorp

Semi Inc

Advncd Semi

Micro Elecs

Hybrid Semi

See Index

Hybrid Semi

NthAmerSemi

Bharat

Natl

~eml

Natl Semi

Matsushita

ToshibaCorp

See Index

ToshibaCorp

Natl Semi

ToshibaCorp

losnlba~rp

~g

50

:g

40

45

50

58

ggg~

800m

600m

100m

250m

1.0

:,uum

500m

150m

200m

150m

l~g~

70M

100M

6.0M

2.0M

1.0u

LOu

1.0u

100n

200n

.5n

lOOn

.50u

500n

lOOn

50n

lOOn

100n

~g

50

70

50

60

55

60

50

·50

~gg~

600m

625m

800m

400m

410m

310m

800m

600m

625m

400m

200m

150 J

175 S

150 J

+g:~~

~g

50

~~

~g~

50M

100M

80M

~~

~~g

j

5.4m

5.0m

4.0m

2.0m

1.:im

1.5m

4.0m

2.0m

7.2m

2.5m

150

135

150

J

:::g::~

TO·92

SIP

TO·92

SPAK

60

70

75

~~~~;~~

80

85

~~~g~:

90

.

ToshibaCorp

See Index

Indust Mexi

Semi Inc

Elec Trans

Advncd Semi

~olia

:stlnc

Semi Inc

Advncd Semi

Natl Semi

ToshibaCorp

Matsushita

Hybrid Semi

~g

50

jg

125 J

125

125 J

150 J

~g

50

:g

80

85

90

100

70

75

80

~~g~

150m

200m

2.0

1.0

150m

200m

:g~

150M

100M

150M

90M

~gg~

100n

lOOn

1.0u

lOOn

lOu

10u

lOu

'~g

60

-60

50

~~g~

400m

300m

900m

375m

300m

500m

~~~

j

~g+:gg

TO·92

TO·18

TO·92

TO·18

TO·92

TO·39

TO·92

SIP

TO·18

~gg~

200m

500m

150m

200m

100m

~g~

90M

50M

150M

4.5p

3.5p

~g~

lOu

500n

lOOn

1.0u

500n

100n

~g

50

55

50

60

~gg~

300m

600m

800m

600m

400m

3.0m

~.()m

~:2~O5~

~rt~s,;"]A

~g

l:'UM

~g

~gg~

4.0m

3.6m

3.2m

4.0m

125 J

150 J

125

135 J

150 J

~~~

j

+g::~

~~~

j

::-g:~~6var

760

2N3913 Related Products

	2N3913	2N3910
Description	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	BCY	TO-46
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-XBCY-W3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	Single	Single
Minimum DC current gain (hFE)	40	40
JEDEC-95 code	TO-18	TO-46
JESD-30 code	O-MBCY-W3	O-XBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	175 °C
Package body material	METAL	UNSPECIFIED
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.4 W	0.5 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz
Base Number Matches	1	1

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