BUR50R1 datasheet, PDF - EEWORLD Datasheet

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BUR50R1: DescriptionPower Bipolar Transistor, 70A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size191KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BUR50R1 Overview

Power Bipolar Transistor, 70A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO3, 2 PIN

BUR50R1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO3, 2 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	70 A
Collector-emitter maximum voltage	125 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
JESD-609 code	e1
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	16 MHz

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SILICON MULTI-EPITAXIAL

NPN TRANSISTOR

BUR50

•

High Pulse Power, Fast Switching.

Hermetic Metal TO3 Package.

Ideally suited for Motor Control

and Power Switching Circuits

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

ICM

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

tp = 10ms

Peak Collector Current

Base Current

TC = 25°C

Total Power Dissipation at

Derate Above 25°C

Junction Temperature Range

Storage Temperature Range

200V

125V

10V

70A

100A

20A

350W

2W/°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Min.

Typ.

Max.

0.5

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 6522

Issue 2

Page 1 of 3

Website:

http://www.semelab-tt.com

BUR50R1 Related Products

	BUR50R1	BUR50
Description	Power Bipolar Transistor, 70A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO3, 2 PIN	Power Bipolar Transistor, 70A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO3, 2 PIN
Is it Rohs certified?	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO3, 2 PIN	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	70 A	70 A
Collector-emitter maximum voltage	125 V	125 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15
JEDEC-95 code	TO-204AE	TO-204AE
JESD-30 code	O-MBFM-P2	O-MBFM-P2
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	16 MHz	16 MHz

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