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MMST2907A

Description
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size76KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet Parametric View All

MMST2907A Overview

600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR

MMST2907A Parametric

Parameter NameAttribute value
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage60 V
Number of terminals3
Maximum off time180 ns
each_compliYes
EU RoHS regulationsYes
stateActive
structureSINGLE
Minimum DC amplification factor50
jesd_30_codeR-PDSO-G3
jesd_609_codee1
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typePNP
wer_dissipation_max__abs_0.2000 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingTIN SILVER COPPER
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Rated crossover frequency200 MHz
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MMST2907A
Features
Power dissipation: 200mW (T
amb
=25 )
Collector current: -0.6A
Marking Code: K3F
Operating and Storage junction temperature range
-55 to + 150
PNP Small Signal
Transistors
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-10uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=-10uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-50Vdc, I
E
=0Vdc)
Collector Cutoff Current
(V
CE
=-35Vdc, I
B
=0Vdc)
Emitter Cutoff Current
(V
EB
=-3Vdc, I
C
=0Vdc)
DC Current Gain
(I
C
=-150mAdc, V
CE
=-10Vdc)
(I
C
=-1mAdc, V
CE
=-10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-500mAdc, I
B
=-50mAdc)
Base-Emitter Saturation Voltage
(I
C
=-500mAdc, I
B
=-50mAdc)
Current Gain-Bandwidth Product
(V
CE
=-20Vdc, I
C
=-50mAdc, f=100MHz)
Output Capacitance
(V
CB
=-10Vdc, f=1.0MHz, I
E
=0)
V
CC
=-30V,I
C
=-150mA,
Delay Time
V
BE(off)
=-0.5V,I
B1
=-15mA
Rise Time
V
CC
=-30V, I
C
=-150mA,
Storage Time
I
B1
=I
B2
=-15mA
Fall Time
Min
-60
-60
-5.0
---
---
---
Max
---
---
---
-0.01
-0.05
-0.01
Units
Vdc
Vdc
O
SOT-323
A
D
OFF CHARACTERISTICS
(2)
B
C
C
B
E
Vdc
µAdc
µAdc
µAdc
---
---
Vdc
Vdc
MHz
pF
ns
ns
ns
ns
DIM
A
B
C
D
E
F
G
H
J
K
G
F
E
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
100
100
---
---
200
---
---
---
---
---
300
---
-0.6
-1.2
---
8
10
25
80
30
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
NOTE
Suggested Solder
Pad Layout
0.70
0.90
1.90
0.65
0.65
www.mccsemi.com
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1 of 2
2008/01/01
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