MMSTA42 datasheet, PDF - EEWORLD Datasheet

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MMSTA42: Description200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size67KB，2 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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MMSTA42 Overview

200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR

MMSTA42 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.2000 A
Maximum Collector-Emitter Voltage	300 V
Processing package description	ROHS COMPLIANT, ULTRA SMALL, PLASTIC, PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	0.2000 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	40
Rated crossover frequency	50 MHz

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

MMSTA42

Features

•

Epitaxial Planar Die Construction

Ideal for Medium Power Amplification and Switching

Ultra-small surface mount package

Marking : K3M

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

NPN Small Signal

Transistors

SOT-323

A

D

Maximum Ratings

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

C

T

J

T

STG

Symbol

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

(1) (3)

Power dissipation

(1)

Junction Temperature

Storage Temperature

O

Rating

300

6.0

200

-55 to +150

Min

300

6.0

---

Max

---

100

Unit

V

mA

mW

O

C

O

C

Units

G

C

B

C

B

F

E

Electrical Characteristics @ 25 C Unless Otherwise Specified

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=1.0mAdc, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

Collector-Emitter Breakdown Voltage

(I

E

=100uAdc, I

C

=0)

Collector-Base Cutoff Current

(V

CB

=200Vdc,I

E

=0)

Emitter-Base Cutoff Current

(V

CE

=6.0Vdc, I

C

=0)

DC Current Gain

(I

C

=1.0mAdc, V

CE

=10Vdc)

(I

C

=10mAdc, V

CE

=10Vdc)

(I

C

=30mAdc, V

CE

=10Vdc)

Collector-Emitter Saturation Voltage

(I

C

=20mAdc, I

B

=2.0mAdc)

Base-Emitter Saturation Voltage

(I

C

=20mAdc, I

B

=2.0mAdc)

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

Vdc

H

J

K

Vdc

nAdc

DIM

A

B

C

D

E

F

G

H

J

K

DIMENSIONS

INCHES

MIN

MAX

.071

.087

.045

.053

.079

.087

.026 Nominal

.047

.055

.012

.016

.000

.004

.035

.039

.004

.010

.012

.016

MM

MIN

MAX

1.80

2.20

1.15

1.35

2.00

2.20

0.65Nominal

1.20

1.40

.30

.40

.000

.100

.90

1.00

.100

.250

.30

.40

NOTE

ON CHARACTERISTICS

(2)

h

FE

25

40

---

0.5

0.9

---

Vdc

Suggested Solder

Pad Layout

0.70

V

CE(sat)

V

BE(sat)

0.90

SMALL SIGNALCHARACTERISTICS

Current-Gain-Bandwidth Product

50

---

(V

CE

=20V, f=100MHz, I

C

=10mA)

C

CB

Collector-Base Capacitance

---

3.0

(V

CB

=20V, f=1.0MHz, I

E

=0)

Note: 1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width<300us, duty cycle<2%

3. When operated within safe operating area constraints.

f

T

MHz

pF

0.65

1.90

www.mccsemi.com

Revision: 4

1 of 2

2008/01/01

MMSTA42 Related Products

	MMSTA42	MMSTA42-TP
Description	200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR	200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3
Transistor polarity	NPN	NPN
Maximum collector current	0.2000 A	0.2000 A
Maximum Collector-Emitter Voltage	300 V	300 V
Processing package description	ROHS COMPLIANT, ULTRA SMALL, PLASTIC, PACKAGE-3	ROHS COMPLIANT, ULTRA SMALL, PLASTIC, PACKAGE-3
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE TIN	MATTE TIN
Terminal location	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE	SINGLE
Number of components	1	1
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum ambient power consumption	0.2000 W	0.2000 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	40	40
Rated crossover frequency	50 MHz	50 MHz

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