PN2222A_08 datasheet, PDF - EEWORLD Datasheet

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PN2222A_08: Description1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; Categorysemiconductor Discrete semiconductor; File Size99KB，4 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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PN2222A_08 Overview

1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

PN2222A_08 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum on-time	35 ns
Maximum off time	285 ns
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	40 V
state	TRANSFERRED
packaging shape	round
Package Size	cylindrical
Terminal form	THROUGH-hole
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.6250 W
Transistor type	Universal small signal
Minimum DC amplification factor	75
Rated crossover frequency	300 MHz

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

PN2222A

Features

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Marking:Type number

Continuous Collector Current (Ic) =600mA.

Operating and storange temperature range(Tj&Tstg)

from -55

°C

~+150

°C

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

and MSL Rating 1

Parameter

Collector-Emitter Breakdown Voltage*

=10mAdc, I

=0)

Collector-Base Breakdown Voltage

=10µAdc, I

=0)

Emitter-Base Breakdown Voltage

=10µAdc, I

=0)

Base Cutoff Current

=60Vdc, V

=3.0Vdc)

Collector Cutoff Current

=60Vdc, V

=3.0Vdc)

DC Current Gain*

=0.1mAdc, V

=10Vdc)

=1.0mAdc, V

=10Vdc)

=10mAdc, V

=10Vdc)

=150mAdc, V

=10Vdc)

=150mAdc, V

=1.0Vdc)

=500mAdc, V

=10Vdc)

Collector-Emitter Saturation Voltage

=150mAdc, I

=15mAdc)

=500mAdc, I

=50mAdc)

Base-Emitter Saturation Voltage

=150mAdc, I

=15mAdc)

=500mAdc, I

=50mAdc)

Current Gain-Bandwidth Product

=20mAdc, V

=20Vdc, f=100MHz)

Output Capacitance

=10Vdec, I

=0, f=100kHz)

Input Capacitance

=0.5Vdc, I

=0, f=100kHz)

Noise Figure

=100µAdc, V

=10Vdc, R

=1.0kΩ

f=1.0kHz)

Delay Time

=30Vdc, V

=0.5Vdc

Rise Time

=150mAdc, I

=15mAdc)

Storage Time

=30Vdc, I

=150mAdc

Fall Time

=15mAdc)

≤

300µs, Duty Cycle

≤

2.0%

600mW

NPN General

Purpose Amplifier

Max

Units

Vdc

nAdc

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Min

6.0

TO-92

OFF CHARACTERISTICS

(BR)CEO

(BR)CBO

(BR)EBO

CEX

ON CHARACTERISTICS

100

300

CE(sat)

0.3

1.0

0.6

1.2

2.0

Vdc

BE(sat)

Vdc

SMALL-SIGNAL CHARACTERISTICS

obo

ibo

300

8.0

4.0

MHz

DIM

INCHES

MIN

.175

.500

.016

.135

.095

DIMENSIONS

MIN

4.45

12.70

0.41

3.43

2.42

SWITCHING CHARACTERISTICS

*Pulse Width

225

MAX

.185

-------

.020

.145

.105

MAX

4.70

--------

0.56

3.68

2.67

NOTE

www.mccsemi.com

Revision: 7

1 of 4

2008/02/01

PN2222A_08 Related Products

	PN2222A_08	PN2222A	PN2222A-BP	PN2222A-AP
Description	1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Number of terminals	3	3	3	3
Maximum on-time	35 ns	35 ns	35 ns	35 ns
Maximum off time	285 ns	285 ns	285 ns	285 ns
Maximum collector current	1 A	1 A	1 A	0.6000 A
Maximum Collector-Emitter Voltage	40 V	40 V	40 V	40 V
state	TRANSFERRED	TRANSFERRED	TRANSFERRED	Active
packaging shape	round	round	round	ROUND
Package Size	cylindrical	cylindrical	cylindrical	CYLINDRICAL
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY
structure	single	single	single	SINGLE
Number of components	1	1	1	1
transistor applications	switch	switch	switch	AMPLIFIER
Transistor component materials	silicon	silicon	silicon	SILICON
Minimum DC amplification factor	75	75	75	40
Rated crossover frequency	300 MHz	300 MHz	300 MHz	300 MHz
Transistor polarity	NPN	NPN	NPN	-
Maximum ambient power consumption	0.6250 W	0.6250 W	0.6250 W	-
Transistor type	Universal small signal	Universal small signal	Universal small signal	-

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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