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PN2907A_08

Description
NTE ELECTRONICS - PN2907A - TRANSISTOR; BIPOLAR; PNP; 80V; 800mA; TO-92-3
Categorysemiconductor    Discrete semiconductor   
File Size122KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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PN2907A_08 Overview

NTE ELECTRONICS - PN2907A - TRANSISTOR; BIPOLAR; PNP; 80V; 800mA; TO-92-3

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
PN2907A
Features
Through Hole Package
Capable of 600mWatts of Power Dissipation
and 600mA Ic
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Marking:MPS2907A
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
PNP General
Purpose Amplifier
TO-92
A
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Base Cutoff Current
(V
CE
=30Vdc, V
BE
=0.5Vdc)
Collector Cutoff Current
(V
CE
=30Vdc, V
BE
=0.5Vdc)
Collector Cutoff Current
(V
CB
=50Vdc, I
E
=0)
(V
CB
=50Vdc, I
E
=0, T
A
=150°C)
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=10Vdc)
(I
C
=1.0mAdc, V
CE
=10Vdc)
(I
C
=10mAdc, V
CE
=10Vdc)
(I
C
=150mAdc, V
CE
=10Vdc)
(I
C
=500mAdc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Current Gain-Bandwidth Product
(I
C
=50mAdc, V
CE
=20Vdc, f=100MHz)
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=100kHz)
Input Capacitance
(V
EB
=2.0Vdc, I
C
=0, f=100kHz)
Delay Time
(V
CC
=3.0Vdc, I
C
=150mAdc,
Rise Time
I
B1
=15mAdc)
Storage Time
(V
CC
=3.0Vdc, I
C
=150mAdc
Fall Time
I
B1
=I
B2
=15mAdc)
300µs, Duty Cycle
2.0%
Min
60
60
5.0
50
50
Max
Units
Vdc
Vdc
Vdc
nAdc
nAdc
µAdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
I
CBO
B
0.1
10.0
C
ON CHARACTERISTICS
h
FE
75
100
100
100
50
300
D
0.4
1.6
1.3
2.6
Vdc
C
Vdc
G
B
E
V
CE(sat)
V
BE(sat)
SMALL-SIGNAL CHARACTERISTICS
f
T
C
cbo
C
ibo
200
8.0
30.0
10
40
80
30
MHz
pF
pF
ns
ns
ns
ns
DIM
A
B
C
D
E
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
*Pulse Width
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
Revision:
5
1 of 4
2008/02/01

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Description NTE ELECTRONICS - PN2907A - TRANSISTOR; BIPOLAR; PNP; 80V; 800mA; TO-92-3 NTE ELECTRONICS - PN2907A - TRANSISTOR; BIPOLAR; PNP; 80V; 800mA; TO-92-3 NTE ELECTRONICS - PN2907A - TRANSISTOR; BIPOLAR; PNP; 80V; 800mA; TO-92-3

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