DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMD4
NPN/PNP resistor-equipped
transistors;
R1 = 10 kΩ, R2 = open
Preliminary specification
2002 Jan 14
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
FEATURES
•
300 mW total power dissipation
•
Very small 1.6 mm
×
1.2 mm
×
0.55 mm ultra thin
package
•
Improved thermal behaviour due to flat leads
•
Self alignment during soldering due to straight leads
•
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
•
Reduces required PCB area
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
NPN/PNP resistor-equipped transistors in a SOT666
plastic package.
TR1
PEMD4
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
TR1
TR2
R1
R2
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
PARAMETER
collector-emitter voltage
peak collector current
NPN
PNP
bias resistor
open
MAX.
50
100
−
−
10
−
UNIT
V
mA
−
−
kΩ
−
handbook, halfpage
6
5
4
6
5
4
R1
TR2
R1
MARKING
TYPE NUMBER
PEMD4
MARKING CODE
23
1
Top view
2
3
1
MHC028
2
3
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2002 Jan 14
2
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MIN.
PEMD4
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
notes 1 and 2
VALUE
416
UNIT
K/W
total power dissipation
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
5
100
100
200
+150
150
+150
V
V
V
mA
mA
mW
°C
°C
°C
2002 Jan 14
3
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
200
−
7
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
−
−
−
TYP.
−
−
−
−
−
−
10
PEMD4
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
CB
= 50 V; I
E
= 0
V
CE
= 50 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 1 mA
I
C
= 10 mA; I
B
= 0.5 mA
100
1
50
100
−
150
13
2.5
3
mV
kΩ
pF
pF
nA
µA
µA
nA
2002 Jan 14
4
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
PEMD4
handbook, halfpage
600
MLD782
10
2
handbook, halfpage
VCEsat
(mV)
MLD783
hFE
(1)
400
(2)
(1)
(3)
200
(2)
(3)
0
10
−1
1
10
IC (mA)
10
2
10
−1
10
1
10
IC (mA)
10
2
TR1 (NPN);
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
TR1 (NPN);
I
C
/I
B
= 10.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
handbook, halfpage
600
MLD784
handbook, halfpage
−10
3
MLD785
hFE
(1)
VCEsat
(mV)
400
−10
2
(2)
200
(3)
(1)
(3) (2)
0
−10
−1
TR2 (PNP);
V
CE
=
−5
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
−1
−10
IC (mA)
−10
2
−10
−10
−1
−1
−10
IC (mA)
−10
2
TR2 (PNP);
I
C
/I
B
= 10.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
Fig.5
DC current gain as a function of collector
current; typical values.
Fig.6
Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Jan 14
5
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