PD-97843A
IRHNJ9A7130
JANSR2N7648U3
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ9A7130
IRHNJ9A3130
100 kRads (Si)
300 kRads (Si)
100V, N-CHANNEL
REF: MIL-PRF-19500/775
TECHNOLOGY
R9
R
DS(on)
34m
34m
I
D
35A
35A
QPL Part Number
JANSR2N7648U3
JANSF2N7648U3
SMD-0.5
Description
IR HiRel R9 technology provides superior power MOSFETs
for space applications. These devices have improved
immunity to Single Event Effect (SEE) and have been
characterized for useful performance with Linear Energy
Transfer (LET) up to 90MeV/(mg/cm
2
). Their combination of
low R
DS
(on) and faster switching times reduces the power
losses and increases power density in today’s high speed
switching applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching and temperature stability of electrical parameters.
Features
Low R
DS
(on)
Fast Switching
Single
Event Effect (SEE) Hardened
Low
Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic package
Light Weight
Surface Mount
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
35
22
140
75
0.6
± 20
605
35
7.5
13
-55 to + 150
300 (for 5s)
1.0 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-01-17
IRHNJ9A7130
JANSR2N7648U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min. Typ. Max. Units
100
–––
–––
2.0
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.1
–––
–––
-8.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
1800
440
3.3
1.0
Test Conditions
–––
V
V
GS
= 0V, I
D
= 1.0mA
–––
V/°C Reference to 25°C, I
D
= 1.0mA
34
m V
GS
= 12V, I
D2
= 22A
4.0
V
V
DS
= V
GS
, I
D
= 1.0mA
––– mV/°C
–––
S
V
DS
= 15V, I
D2
= 22A
1.0
V
DS
= 80V, V
GS
= 0V
µA
10
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
48
I
D1
= 35A
nC
V
DS
= 50V
25
V
GS
= 12V
9.0
25
V
DD
= 50V
I
D1
= 35A
56
ns
38
R
G
= 7.5
V
GS
= 12V
27
–––
–––
–––
–––
–––
nH
Measured from center of Drain
pad to center of Source pad
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
140
820
35
140
1.2
210
–––
A
V
ns
nC
Test Conditions
T
J
= 25°C,I
S
= 35A, V
GS
= 0V
T
J
= 25°C, I
F
= 35A, V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
Parameter
Junction-to-Case
Min.
–––
Typ.
–––
Max.
1.67
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 100V, starting T
J
= 25°C, L = 2.5mH, Peak I
L
= 22A, V
GS
= 20V
V
I
SD
35A, di/dt
980A/µs, V
DD
100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-01-17
IRHNJ9A7130
JANSR2N7648U3
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Up to 300 kRads (Si)
1
Min.
Max.
100
–––
2.0
–––
–––
–––
–––
–––
–––
4.0
100
-100
1.0
36
34
1.2
Units
V
V
nA
nA
µA
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
= 0V
m V
GS
= 12V, I
D2
= 22A
m V
GS
= 12V, I
D2
= 22A
V
V
GS
= 0V, I
S
= 35A
1. Part numbers IRHNJ9A7130(JANSR2N7648U3) and IRHNJ9A3130 (JANSF2N7648U3)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
37 ± 5%
59.8 ± 5%
89.8 ± 5%
Energy
(MeV)
417 ± 7.5%
753 ± 7.5%
1515 ± 7.5%
Range
(µm)
50 ± 7.5%
60 ± 7.5%
82 ± 7.5%
@ VGS = 0V
100
100
100
VDS (V)
@ VGS = -1V
100
100
100
@ VGS = -5V @ VGS = -10V
100
100
–––
100
100
–––
120
100
80
60
40
20
0
0
-2
-4
-6
-8
-10
Bias VGS (V)
Fig a.
Typical Single Event Effect, Safe Operating Area
Bias VDS (V)
LET = 37 ± 5%
LET = 59.8 ± 5%
LET = 89.8 ± 5%
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2019-01-17
IRHNJ9A7130
JANSR2N7648U3
Pre-Irradiation
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.0V
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.0V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
100
BOTTOM
5.0V
10
10
5.0V
20µs
PULSE WIDTH,
1
0.1
1
Tj = 25°C
10
100
20µs
PULSE WIDTH,
1
0.1
1
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
R DS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 35A
ID, Drain-to-Source Current (A)
100
T J = 150°C
T J = 25°C
10
1.5
1.0
1
2
4
6
VDS = 50V
20s PULSE WIDTH
8
10
12
14
VGS = 12V
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
RDS(on), Drain-to -Source On Resistance (m
Fig 4.
Normalized On-Resistance Vs. Temperature
RDS(on), Drain-to -Source On Resistanc (m
)
120
110
100
90
80
70
60
50
40
30
20
10
0
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 150°C
ID = 35A
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
V
GS
= 12V
T J = 25°C
T J = 150°C
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 5.
Typical On-Resistance Vs Gate Voltage
4
Fig 6.
Typical On-Resistance Vs Drain Current
2019-01-17
International Rectifier HiRel Products, Inc.
IRHNJ9A7130
JANSR2N7648U3
Pre-Irradiation
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
125
4.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
3.5
3.0
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Temperature ( °C )
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
120
115
110
105
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
4000
3600
3200
VGS = 0V,
f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 8.
Typical Threshold Voltage Vs
Temperature
20
ID = 35A
VGS, Gate-to-Source Voltage (V)
16
VDS = 80V
VDS = 50V
VDS = 20V
C, Capacitance (pF)
2800
2400
2000
1600
1200
800
400
0
1
10
100
Coss
Ciss
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 17
0
0
5
10
15
20
25
30
35
40
45
Crss
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000
40
35
ID, Drain Current (A)
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
30
25
20
15
10
5
0
100
T J = 150°C
10
T J = 25°C
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-to-Drain Voltage (V)
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 11.
Typical Source-Drain Diode Forward Voltage
5
Fig 12.
Maximum Drain Current Vs.Case Temperature
2019-01-17
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