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DB24417

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, ROHS COMPLIANT, TMINIP2-F2-B, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size395KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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DB24417 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, ROHS COMPLIANT, TMINIP2-F2-B, 2 PIN

DB24417 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.54 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse recovery time0.03 µs
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
This product complies with the RoHS Directive (EU 2002/95/EC).
DB24417
Silicon epitaxial planar type
For rectification
Features
forward voltage V
F
Low
Forward current (Average) I
F(AV)
= 5 A rectification is possible
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
TMiniP2-F2-B
Package dimension clicks here.→
Click!
Packaging
DB2441700L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Name
Pin
1: Cathode
2: Anode
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
*1
Non-repetitive peak forward surge current
*2
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
40
40
5.0
50
125
–40 to +125
Unit
V
V
A
A
°C
°C
Marking Symbol: 4W
Note) *1: Mounted on an alumina PC board (Board: 50 mm
×
50 mm)
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
I
R
C
t
t
rr
I
F
= 5.0 A
V
R
= 40 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA ,
R
L
= 100
Conditions
Min
Typ
0.47
60
95
30
Max
0.54
300
Unit
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: April 2012
Ver. CED
1

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