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HM66AEB9402BP-33

Description
4MX9 DDR SRAM, 0.45ns, PBGA165, PLASTIC, FBGA-165
Categorystorage    storage   
File Size236KB,32 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HM66AEB9402BP-33 Overview

4MX9 DDR SRAM, 0.45ns, PBGA165, PLASTIC, FBGA-165

HM66AEB9402BP-33 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeBGA
package instructionLBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Maximum clock frequency (fCLK)300 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
length17 mm
memory density37748736 bit
Memory IC TypeDDR SRAM
memory width9
Humidity sensitivity level1
Number of functions1
Number of terminals165
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX9
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.46 mm
Maximum standby current0.33 A
Minimum standby current1.7 V
Maximum slew rate0.72 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
HM66AEB36102/HM66AEB18202
HM66AEB9402
36-Mbit DDR II SRAM
2-word Burst
REJ03C0046-0001Z
(Previous ADE-203-1365 (Z) Rev. 0.0)
Preliminary
Rev.0.01
Apr.28.2004
Description
The HM66AEB36102 is a 1,048,576-word by 36-bit, the HM66AEB18202 is a 2,097,152-word by 18-bit,
and the HM66AEB9402 is a 4,194,304-word by 9-bit synchronous double data rate static RAM fabricated
with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique
synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair
(K and
K)
and are latched on the positive edge of K and
K.
These products are suitable for applications
which require synchronous operation, high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin plastic FBGA package.
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Renesas Technology's Sales Dept. regarding specifications.
Rev.0.01, Apr.28.2004, page 1 of 28

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