IDT7M4013S25NH datasheet, PDF - EEWORLD Datasheet

IDT7M4013S25NH: DescriptionSRAM Module, 128KX32, 25ns, CMOS, CPMA66; Categorystorage storage; File Size207KB，9 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7M4013S25NH Overview

SRAM Module, 128KX32, 25ns, CMOS, CPMA66

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	S-CPMA-P66
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	66
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX32
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	PGA
Encapsulate equivalent code	PGA66,11X11
Package shape	SQUARE
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.06 A
Minimum standby current	4.5 V
Maximum slew rate	0.72 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal pitch	2.54 mm
Terminal location	PERPENDICULAR
Maximum time at peak reflow temperature	30

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