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BZD17C200PRH

Description
Zener Diode, 200V V(Z), 2.3W
CategoryDiscrete semiconductor    diode   
File Size243KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BZD17C200PRH Overview

Zener Diode, 200V V(Z), 2.3W

BZD17C200PRH Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-F2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance750 Ω
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.8 W
Nominal reference voltage200 V
Maximum reverse current1 µA
Reverse test voltage150 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Voltage temperatureCoeff-Max260 mV/°C
Maximum voltage tolerance6%
Working test current4 mA
CREAT BY ART
BZD17C SERIES
0.8 Watts Voltage Regulator Diodes
Sub SMA
Features
Silicon zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering guaranteed:
260℃ / 10 seconds
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Sub SMA Plastic
Terminals: Pure tin plated, lead free
Packaging method: refer to package code
Marking code: as table
Weight: 0.01 gram
Ordering Information (example)
Part No.
Package
Packing
3K / 7" REEL
Packing code
RV
Packing code
(Green)
RVG
BZD17C11P Sub-SMA
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Forward Voltage @ I
F
=0.2A
Power Dissipation at T
L
=80℃
T
A
=25℃ (Note 1)
Non-Repetitive Peak Pulse Power Dissipation
100us square pulse (Note 2)
Thermal Resistance Junction to Ambient Air (Note 1)
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
Note 2: T
J
=25℃ Prior to Surge
Symbol
V
F
Ptot
P
ZSM
R
θJA
R
θJL
T
J
, T
STG
Value
1.2
2.3
0.8
300
180
30
-55 to +175
Unit
Volts
Watts
Watts
℃/W
℃/W
Note 1: Mounted on Cu-Pad size 5mm x 5mm (≧40um thick)
Version:I13
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