EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1360-O

Description
TRANSISTOR 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size144KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1360-O Overview

TRANSISTOR 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power

2SA1360-O Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment5 W
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max1 V
Base Number Matches1
2SA1360
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1360
Audio Frequency Amplifier Applications
Unit: mm
Complementary to 2SC3423
Small collector output capacitance: C
ob
= 2.5 pF (typ.)
High transition frequency: f
T
= 200 MHz (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−150
−150
−5
−50
−5
1.2
5
150
−55
to 150
Unit
V
V
V
mA
mA
W
JEDEC
°C
°C
2-8H1A
JEITA
TOSHIBA
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.82 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-10

2SA1360-O Related Products

2SA1360-O 2SA1360-Y
Description TRANSISTOR 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power TRANSISTOR 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power
Is it Rohs certified? incompatible incompatible
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A
Collector-emitter maximum voltage 150 V 150 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 80 120
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power consumption environment 5 W 5 W
Maximum power dissipation(Abs) 1.2 W 1.2 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
VCEsat-Max 1 V 1 V
Base Number Matches 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1684  182  2021  235  843  34  4  41  5  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号