4. Switching characteristics are independent of operating junction temperatures.
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2
NTMS4705N
TYPICAL PERFORMANCE CURVES
30
I
D,
DRAIN CURRENT (AMPS)
25
20
15
2.6 V
10
5
0
0
2.4 V
5V
3.8 V
3.4 V
3.2 V
T
J
= 25°C
I
D,
DRAIN CURRENT (AMPS)
42
36
30
24
18
12
6
0
1
2
3
4
5
6
7
8
9
10
0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
3
4
2
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
5
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
V
DS
≥
10 V
3V
Figure 1. On-Region Characteristics
R
DS(on),
DRAIN-TO-SOURCE RESISTANCE (W)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
2.5
7.5
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
T
J
= 25°C
I
D
= 12 A
R
DS(on),
DRAIN-TO-SOURCE RESISTANCE (W)
0.018
Figure 2. Transfer Characteristics
T
J
= 25°C
0.014
V
GS
= 4.5 V
0.010
V
GS
= 10 V
0.006
0.002
4
8
16
12
20
I
D,
DRAIN CURRENT (AMPS)
24
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.8
R
DS(on),
DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
-50
1
-25
0
25
50
75
100
125
150
I
D
= 12 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
10000
1000000
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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3
NTMS4705N
TYPICAL PERFORMANCE CURVES
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
2500
V
DS
= 0 V
C, CAPACITANCE (pF)
2000 C
iss
V
GS
= 0 V
T
J
= 25°C
5
QT
4
Q
GS
3
Q
GD
V
GS
1500
C
iss
1000 C
rss
C
oss
C
rss
0
10
5
V
GS
0
V
DS
5
10
15
20
25
2
500
1
0
0
3
I
D
= 10 A
T
J
= 25°C
12
6
9
Q
G
, TOTAL GATE CHARGE (nC)
15
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 15 V
I
D
= 12 A
V
GS
= 4.5 V
t, TIME (ns)
100
t
r
t
f
10
t
d(off)
t
d(on)
18
15
12
9
6
3
0
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0
Figure 8. Gate-To-Source and
Drain-To-Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
1
0.2
0.6
0.8
0.4
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1.0
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
Figure 10. Diode Forward Voltage vs. Current
220
200
180
160
140
120
100
80
60
40
20
0
25
100
50
75
125
T
J
, STARTING JUNCTION TEMPERATURE (°C)
150
I
D
= 10 A
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTMS4705N
PACKAGE DIMENSIONS
SOIC-8
CASE 751-07
ISSUE AJ
-X-
A
8
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STANDARD IS 751-07.
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0
_
8
_
0.25
0.50
5.80
6.20
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0
_
8
_
0.010
0.020
0.228
0.244
B
1
4
S
0.25 (0.010)
M
Y
M
-Y-
G
C
-Z-
H
D
0.25 (0.010)
M
SEATING
PLANE
K
N
X 45
_
0.10 (0.004)
M
Z Y
S
J
X
S
DIM
A
B
C
D
G
H
J
K
M
N
S
SOLDERING FOOTPRINT*
1.52
0.060
STYLE 12:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm
inches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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