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FR1012GP

Description
Rectifier Diode, 1 Element, 1A, 1200V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size117KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

FR1012GP Overview

Rectifier Diode, 1 Element, 1A, 1200V V(RRM)

FR1012GP Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codecompliant
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
FR1012GP
Thru
FR1020GP
1 Amp Fast Recovery
Silicon Rectifier
1200 to 2000 Volts
DO-41
Features
High Voltage
Single Die Construction
Glass Passivated Junction
High Reliability Moly Type Construction
Fast Switching Speed For High Efficiency
Perfect For Ballast, Television And Monitor Applications
Maximum Ratings
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Maximum
Recurrent
Peak Reverse
Voltage
1200V
1400V
1600V
1800V
2000V
Maximum DC
Blocking
Voltage
1200V
1400V
1600V
1800V
2000V
Microsemi
Part Number
FR1012GP
FR1014GP
FR1016GP
FR1018GP
FR1020GP
Maximum
RMS Voltage
840V
980V
1120V
1260V
1400V
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1A
T
A
= 55°C
Current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
1.35V
I
FM
= 1.0A;
FR1012-1016
V
F
1.50V
FR1018-1020
T
A
= 25°C
Maximum DC
Reverse Current At
I
R
5.0µA
T
A
= 25°C
Rated DC Blocking
100µA T
A
= 100°C
Voltage
Maximum Reverse
Recovery Time
300ns I
F
=0.5A, I
R
=1.0A,
FR1012-1016
T
rr
500ns I
rr
=0.25A
FR1018-1020
Typical Junction
C
J
15pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
C
DIMENSIONS
INCHES
MIN
.166
.080
.028
1.000
MM
MIN
4.10
2.00
.70
25.40
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
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