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FR3M

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size260KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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FR3M Overview

Rectifier Diode,

FR3M Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionSMC, 2 PIN
Reach Compliance Codecompliant
Other featuresLOW LEAKAGE CURRENT
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
Maximum reverse recovery time0.5 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
FR3A-FR3K
Technical Data
Data Sheet N1742, Rev. B
FR3A-FR3M
3.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
Features
Fast switching for high efficiency
Low leakage current
High forward surge capability
Solder dip 260°C, 40s
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Glass passivated chip junction
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon
request
SMC
Circuit Diagram
Mechanical Data
Case: SMC molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.21grams
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Maximum RMS voltage
Average forward rectified output current
@T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I
F
=3.0A
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Reverse recovery time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
V
RRM
V
DC
V
RMS
I
(AV)
I
FSM
V
FM
I
RM
t
rr
C
J
R
θJA
T
STG
150
60
50
-55 to +150
FR3A
50
35
FR3B
100
70
FR3D
200
140
FR3G
400
280
3.0
100
1.30
5.0
50.0
250
500
FR3J FR3K FR3M Units
600
420
800 1000
560
700
V
V
A
A
V
µA
ns
pF
°C/W
°C
Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Mounted on P.C.B Board with 8.0mm
2
land area.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

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