Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 30V V(RRM), Silicon, POWER PACKAGE-3
| Parameter Name | Attribute value |
| Maker | Microsemi |
| package instruction | R-XSSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | REVERSE ENERGY TESTED |
| application | POWER |
| Configuration | COMMON ANODE, 2 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.5 V |
| JESD-30 code | R-XSSO-G3 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 800 A |
| Number of components | 2 |
| Phase | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -40 °C |
| Maximum output current | 35 A |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 30 V |
| Maximum reverse current | 5000 µA |
| surface mount | YES |
| technology | SCHOTTKY |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
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