BGR269
200 MHz, 35 dB gain reverse amplifier
Rev. 6 — 5 August 2010
Product data sheet
1. Product profile
1.1 General description
High performance amplifier in a SOT115J package, operating at a voltage supply of
24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Excellent linearity
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
35 dB amplification up to 200 MHz
1.3 Applications
Reverse amplifier in two-way CATV systems operating in the 5 MHz to 200 MHz
frequency range
1.4 Quick reference data
Table 1.
G
p
I
tot
[1]
Quick reference data
Conditions
f = 5 MHz
f = 200 MHz
total current
V
B
= 24 V
[1]
Symbol Parameter
power gain
Min
34.5
35
145
Typ
35
-
160
Max
35.5
36
175
Unit
dB
dB
mA
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to V
B
= 35 V.
NXP Semiconductors
BGR269
200 MHz, 35 dB gain reverse amplifier
2. Pinning information
Table 2.
Pin
1
2
3
5
7
8
9
Pinning
Description
input
common
common
+V
B
common
common
output
1 3 5 7 9
1
5
9
Simplified outline
Symbol
2 3 7 8
sym095
3. Ordering information
Table 3.
Ordering information
Package
Name
BGR269
-
Description
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
×
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Version
SOT115J
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
i
T
mb
T
stg
Parameter
RF input voltage
mounting base temperature
storage temperature
range
Conditions
Min
-
−20
−40
Max
50
+100
+100
Unit
dBmV
°C
°C
BGR269
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 5 August 2010
2 of 8
NXP Semiconductors
BGR269
200 MHz, 35 dB gain reverse amplifier
5. Characteristics
Table 5.
Characteristics
Bandwidth 5 MHz to 200 MHz; V
B
= 24 V; T
mb
= 30
°
C; Z
S
= Z
L
= 75
Ω
; unless otherwise specified.
Symbol Parameter
G
p
SL
FL
power gain
slope straight line
Conditions
f = 5 MHz
f = 200 MHz
f = 5 MHz to 200 MHz
f = 10 MHz to 190 MHz
f = 190 MHz to 200 MHz
s
11
s
22
ϕ
s21
s
12
CTB
input return losses
output return losses
phase response
reverse isolation
composite triple beat
f = 5 MHz to 200 MHz
f = 5 MHz to 200 MHz
f = 5 MHz
f = 5 MHz to 200 MHz
V
o
= 50 dBmV
6 channels flat; measured at 37 MHz
10 channels flat; measured at 67.25 MHz
28 channels flat; measured at 199.25 MHz
X
mod
cross modulation
V
o
= 50 dBmV
6 channels flat; measured at 37 MHz
10 channels flat; measured at 25 MHz
28 channels flat; measured at 25 MHz
CSO
composite second order
distortion
V
o
= 50 dBmV
6 channels flat; measured at 38 MHz
10 channels flat; measured at 68.5 MHz
28 channels flat; measured at 200.5 MHz
V
o
d
2
NF
I
tot
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
[1]
[2]
[3]
[1]
[2]
[3]
Min
34.5
35
−0.2
−0.1
−0.1
−0.1
20
20
−45
-
-
-
-
-
-
-
-
-
-
62
-
-
-
[6]
Typ
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
160
Max
35.5
36
0.6
+0.4
+0.5
+0.4
-
-
+45
−42
−74
−68
−57
−66
−57
−50
−74
−74
−66
-
−70
5.3
5.5
175
Unit
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dB
dB
dB
mA
flatness of frequency response f = 5 MHz to 10 MHz
output voltage
second-order distortion
noise figure
total current
d
im
=
−60
dB
f = 70 MHz
f = 200 MHz
145
From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz and 37.00 MHz.
From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz, 37.00 MHz, 43.00 MHz, 55.25 MHz,
61.25 MHz and 67.25 MHz.
From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz, 37.00 MHz, 43.00 MHz, 55.25 MHz,
61.25 MHz, 67.25 MHz, 77.25 MHz, 83.25 MHz, 109.25 MHz, 115.25 MHz, 121.25 MHz, 127.25 MHz, 133.25 MHz, 139.25 MHz,
145.25 MHz, 151.25 MHz, 157.25 MHz, 163.25 MHz, 169.25 MHz, 175.25 MHz, 181.25 MHz, 187.25 MHz, 193.25 MHz and
199.25 MHz.
Measured according to DIN45004B;
f
p
= 197.25 MHz; V
p
= V
o
; f
q
= 204.25 MHz; V
q
= V
o
−
6 dB; f
r
= 206.25 MHz; V
r
= V
o
−
6 dB; measured at f
p
+ f
q
−
f
r
= 195.25 MHz.
f
p
= 83.25 MHz; V
p
= 50 dBmV; f
q
= 115.25 MHz; V
q
= 50 dBmV; measured at f
p
+ f
q
= 198.5 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to V
B
= 35 V.
[4]
[5]
[6]
BGR269
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 5 August 2010
3 of 8
NXP Semiconductors
BGR269
200 MHz, 35 dB gain reverse amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
D
E
Z
p
SOT115J
A2
1
A
L
F
S
W
d
U2
B
y
M
B
p
Q
e
e1
q2
q1
y
M
B
x
M
B
b
w
M
2
3
5
7
8
9
c
U1
q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.5
b
c
D
max.
d
E
max.
e
e1
F
L
min.
p
Q
max.
q
q1
q2
S
U1
U2
W
w
x
y
0.1
Z
max.
3.8
mm 20.8
4.15
2.04
0.51
0.25 27.2
13.75 2.54 5.08 12.7 8.8
3.85
2.54
0.38
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
OUTLINE
VERSION
SOT115J
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-02-04
10-06-18
Fig 1.
BGR269
Package outline SOT115J
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 5 August 2010
4 of 8
NXP Semiconductors
BGR269
200 MHz, 35 dB gain reverse amplifier
7. Revision history
Table 6.
Revision history
Release date
20100805
Data sheet status
Product data sheet
Change notice
-
Supersedes
BGR269_5
Document ID
BGR269 v.6
Modifications:
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines of
NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 5 “Characteristics”
SL minimum value modified.
Product data sheet
Product specification
Preliminary specification
Preliminary specification
Objective specification
-
-
-
-
-
BGR269_4
BGR269_N_3
BGR269_N_2
BGR269_1
-
BGR269_5
BGR269_4
BGR269_N_3
BGR269_N_2
BGR269_1
20050530
20020305
20010928
20001212
20000501
BGR269
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 5 August 2010
5 of 8
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