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BLL6H0514LS-130

Description
LDMOS driver transistor
CategoryDiscrete semiconductor    The transistor   
File Size112KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLL6H0514LS-130 Overview

LDMOS driver transistor

BLL6H0514LS-130 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionFLATPACK, S-CDFP-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)18 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeS-CDFP-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 1 — 9 August 2010
Preliminary data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1.
Application information
Typical RF performance at T
case
= 25
°
C; I
Dq
= 50 mA; in a class-AB application circuit.
Mode of operation
pulsed RF
f
(MHz)
960 to 1215
1200 to 1400
t
p
(μs)
128
300
δ
(%)
10
10
V
DS
(V)
50
50
P
L
(W)
130
130
G
p
(dB)
19
17
RL
in
(dB)
10
10
η
D
(%)
54
50
P
droop(pulse)
(dB)
0
0
t
r
(ns)
15
15
t
f
(ns)
8
8
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

BLL6H0514LS-130 Related Products

BLL6H0514LS-130 BLL6H0514L-130
Description LDMOS driver transistor LDMOS driver transistor
Is it Rohs certified? conform to conform to
package instruction FLATPACK, S-CDFP-F2 FLANGE MOUNT, S-CDFM-F2
Contacts 2 2
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 18 A 18 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band L BAND L BAND
JESD-30 code S-CDFP-F2 S-CDFM-F2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE SQUARE
Package form FLATPACK FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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